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Title: Process Variation Model and Analysis for Domain Wall-Magnetic Tunnel Junction Logic
The domain wall-magnetic tunnel junction (DW-MTJ) is a spintronic device that enables efficient logic circuit design because of its low energy consumption, small size, and non-volatility. Furthermore, the DW-MTJ is one of the few spintronic devices for which a direct cascading mechanism is experimentally demonstrated without any extra buffers; this enables potential design and fabrication of a large-scale DW-MTJ logic system. However, DW-MTJ logic relies on the conversion between electrical signals and magnetic states which is sensitive to process imperfection. Therefore, it is important to analyze the robustness of such DW-MTJ devices to anticipate the system reliability before fabrication. Here we propose a new DW-MTJ model that integrates the impacts of process variation to enable the analysis and optimization of DW-MTJ logic. This will allow circuit and device design that enhances the robustness of DW-MTJ logic and advances the development of energy-efficient spintronic computing systems.  more » « less
Award ID(s):
1910800
NSF-PAR ID:
10231015
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
IEEE International Symposium on Circuits and Systems
Page Range / eLocation ID:
1 to 5
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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