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Abstract Plasmonic hot‐electron‐assisted control of emission intensities and dynamics of CdSe/ZnS and infrared PbS quantum dots are studied. This is done by exploring the impact of Au/Si and Ag/Si Schottky junctions on the decay rates of such quantum dots when these junctions are placed in close vicinity of a Si/Al oxide charge barrier, forming metal‐oxide plasmonic metafilms. Such structures are used to investigate how metal‐dependent distributions of hot electrons and their capture via Schottky junctions can lead to suppression of the defect environments of quantum dots, offering a novel platform wherein off‐resonant (non‐Purcell) plasmonic processes are used to control exciton dynamics. These results show that Ag metafilms can enhance the emission of CdSe/ZnS quantum dots and elongate their lifetimes more than Au metafilms. This highlights the more efficient nature of Ag/Si Schottky junctions for hot electron excitation and capture. These results also show that such junctions can significantly suppress the nonradiative decay rates of PbS quantum dots at frequencies far from the plasmon resonances. These results demonstrate a field‐effect passivation of quantum dot defects via entrapment of hot electrons and control of emission intensities and dynamics of quantum dots via the nearly frequency‐independent electrostatic field of such electrons.
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Controllable quantum point junction on the surface of an antiferromagnetic topological insulator
Abstract Engineering and manipulation of unidirectional channels has been achieved in quantum Hall systems, leading to the construction of electron interferometers and proposals for low-power electronics and quantum information science applications. However, to fully control the mixing and interference of edge-state wave functions, one needs stable and tunable junctions. Encouraged by recent material candidates, here we propose to achieve this using an antiferromagnetic topological insulator that supports two distinct types of gapless unidirectional channels, one from antiferromagnetic domain walls and the other from single-height steps. Their distinct geometric nature allows them to intersect robustly to form quantum point junctions, which then enables their control by magnetic and electrostatic local probes. We show how the existence of stable and tunable junctions, the intrinsic magnetism and the potential for higher-temperature performance make antiferromagnetic topological insulators a promising platform for electron quantum optics and microelectronic applications.
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- PAR ID:
- 10253193
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 12
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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