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The focused helium ion beam microscope is a versatile imaging and nanofabrication instrument enabling direct-write lithography with sub-10 nm resolution. Subsurface damage and swelling of substrates due to helium ion implantation is generally unwanted. However, these effects can also be leveraged for specific nanofabrication tasks. To explore this, we investigate focused helium ion beam induced swelling of bulk crystalline silicon and free-standing amorphous silicon nitride membranes using various irradiation strategies. We show that the creation of near-surface voids due to helium ion implantation can be used to induce surface nanostructure and create subsurface nanochannels. By tailoring the ion dose and beam energy, the size and depth of the swollen features can be controlled. Swelling heights of several hundred nanometers are demonstrated, and for the embedded nanochannels, void internal diameters down to 30 nm are shown. Potential applications include the engineering of texturized substrates and the prototyping of on-chip nanofluidic transport devices.
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Quantifying residual stress in Helium-implanted surfaces and its implication for blistering
Helium implantation in surfaces is of interest for plasma-facing materials and other nuclear applications. Vanadium as both a representative bcc material and a material relevant for fusion applications is implanted using a Helium ion beam microscope, and the resulting swelling and nanomechanical properties are quantifed. These values are put in correlation to data obtained from micro-residual stress measurements using a focused ion beam-based ring-core technique. We found that the swelling measured is similar to literature values. Further, we are able to measure the surface stress caused by the implantation and fnd that it approaches the yield strength of the material at blistering doses. The simple calculations performed in the present work, along with several geometrical considerations deduced from experimental results confrm the driving force for blister formation comes from bulging resulting mainly from gas pressure buildup, rather than solely stress-induced buckling
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- Award ID(s):
- 1807822
- PAR ID:
- 10258186
- Date Published:
- Journal Name:
- Journal of Materials Research
- ISSN:
- 0884-2914
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract It has long been observed experimentally that energetic ion-beam irradiation of semiconductor surfaces may lead to spontaneous nanopattern formation. For most ion/target/energy combinations, the patterns appear when the angle of incidence exceeds a critical angle, and the models commonly employed to understand this phenomenon exhibit the same behavioral transition. However, under certain conditions, patterns do not appear for any angle of incidence, suggesting an important mismatch between experiment and theory. Previous work by our group (Swenson and Norris 2018 J. Phys.: Condens. Matter 30 304003) proposed a model incorporating radiation-induced swelling, which is known to occur experimentally, and found that in the analytically-tractable limit of small swelling rates, this effect is stabilizing at all angles of incidence, which may explain the observed suppression of ripples. However, at that time, it was not clear how the proposed model would scale with increased swelling rate. In the present work, we generalize that analysis to the case of arbitrary swelling rates. Using a numerical approach, we find that the stabilization effect persists for arbitrarily large swelling rates, and maintains a stability profile largely similar to that of the small swelling case. Our findings strongly support the inclusion of a swelling mechanism in models of pattern formation under ion beam irradiation, and suggest that the simpler small-swelling limit is an adequate approximation for the full mechanism. They also highlight the need for more—and more detailed—experimental measurements of material stresses during pattern formation.more » « less
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1557/s43578-021-00108-6
