Ion-beam irradiation of an amorphizable material such as Si or Ge may lead to spontaneous pattern formation, rather than flat surfaces, for irradiation beyond some critical angle against the surface normal. It is observed experimentally that this critical angle varies according to many factors, including beam energy, ion species and target material. However, many theoretical analyses predict a critical angle
- Award ID(s):
- 1807822
- NSF-PAR ID:
- 10258186
- Date Published:
- Journal Name:
- Journal of Materials Research
- ISSN:
- 0884-2914
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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