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Near the 100th anniversary of the discovery of ferroelectricity, so-called sliding ferroelectricity has been proposed and confirmed recently in a series of experiments that have stimulated remarkable interest. Such ferroelectricity exists widely and exists only in two-dimensional (2D) van der Waals stacked layers, where the vertical electric polarization is switched by in-plane interlayer sliding. Reciprocally, interlayer sliding and the “ripplocation” domain wall can be driven by an external vertical electric field. The unique combination of intralayer stiffness and interlayer slipperiness of 2D van der Waals layers greatly facilitates such switching while still maintaining environmental and mechanical robustness at ambient conditions. In this perspective, we discuss the progress and future opportunities in this behavior. The origin of such ferroelectricity as well as a general rule for judging its existence are summarized, where the vertical stacking sequence is crucial for its formation. This discovery broadens 2D ferroelectrics from very few material candidates to most of the known 2D materials. Their low switching barriers enable high-speed data writing with low energy cost. Related physics like Moiré ferroelectricity, the ferroelectric nonlinear anomalous Hall effect, and multiferroic coupling are discussed. For 2D valleytronics, nontrivial band topology and superconductivity, their possible couplings with sliding ferroelectricity via certain stacking or Moiré ferroelectricity also deserve interest. We provide critical reviews on the current challenges in this emerging area.
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Recent progress on 2D ferroelectric and multiferroic materials, challenges, and opportunity
Recently, the developments of two-dimensional (2D) ferroelectrics and multiferroics have attracted much more attention among researchers. These materials are useful for high-density devices for multifunctional applications such as sensors, transducers, actuators, non-volatile memories, photovoltaic, and FETs. Although several theoretical works have been reported on layered ferroelectrics, experimental work is still lacking in single to few-atomic layers of 2D ferroelectric materials. In this review, we have discussed the recent theoretical as well as experimental progress of 2D ferroelectric and multiferroic materials. The emphasis is given to the development of single to few-atomic layers of 2D ferroelectric materials. In this regard, the recent developments of 2D ferroelectric polarization on vanadium oxyhalides VOX2 (X=I, Br, Cl, and F), distorted phase d1-MoTe2, In2Se3, and SnSe are discussed. d1-MoTe2 shows Curie temperature (TC) above room temperature, while few-layered In2Se3 shows in-plane ferroelectricity and interesting domain wall dynamics in a single atomic layer of SnSe. This follows the discussion of multiferroic materials based on transition metal oxyiodide MOI2 (M=Ti, V, and Cr), double perovskite bilayer, and iron-doped In2Se3. While pristine In2Se3 shows ferroelectric properties, iron-doped In2Se3 shows multiferroicity. Finally, the potential applications of 2D ferroelectrics and multiferroics have been discussed that follow the challenges and opportunities in this field, which can guide the research community to develop next-generation 2D ferroelectric and multiferroic materials with interesting properties.
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- Award ID(s):
- 1900692
- PAR ID:
- 10268266
- Date Published:
- Journal Name:
- Emergent Materials
- ISSN:
- 2522-5731
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1007/s42247-021-00223-4
