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Title: Generation of Bessel-beam arrays for parallel fabrication in two-photon polymerization
This proceeding was published in a special issue of J. Laser Appl. as: H. Cheng, C. Xia, S. M. Kuebler, P. Golvari, M. Sun, M. Zhang, X. Yu*. "Generation of Bessel-beam arrays for parallel fabrication in two-photon polymerization." J. Laser Appl. 2021, 33, 012040-1 - 012040-6;  more » « less
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NANO 3: Custom Nanomanufacturing, a conference held as part of the 39th International Congress on Applications of Lasers & Electro-Optics (ICALEO)
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National Science Foundation
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A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. 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