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Title: Band offsets of (100) β -(Al x Ga 1−x ) 2 O 3 / β -Ga 2 O 3 heterointerfaces grown via MOCVD
Award ID(s):
2019753 1810041
PAR ID:
10273769
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
117
Issue:
25
ISSN:
0003-6951
Page Range / eLocation ID:
252105
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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