The last decades have witnessed substantial progress in optical technologies revolutionizing our ability to record and manipulate neural activity in genetically modified animal models. Meanwhile, human studies mostly rely on electrophysiological recordings of cortical potentials, which cannot be inferred from optical recordings, leading to a gap between our understanding of dynamics of microscale populations and brain‐scale neural activity. By enabling concurrent integration of electrical and optical modalities, transparent graphene microelectrodes can close this gap. However, the high impedance of graphene constitutes a big challenge toward the widespread use of this technology. Here, it is experimentally demonstrated that this high impedance of graphene microelectrodes is fundamentally limited by quantum capacitance. This quantum capacitance limit is overcome by creating a parallel conduction path using platinum nanoparticles. A 100 times reduction in graphene electrode impedance is achieved, while maintaining the high optical transparency crucial for deep two‐photon microscopy. Using a transgenic mouse model, simultaneous electrical recording of cortical activity with high fidelity is demonstrated while imaging calcium signals at various cortical depths right beneath the transparent microelectrodes. Multimodal analysis of Ca2+spikes and cortical surface potentials offers unique opportunities to bridge our understanding of cellular dynamics and brain‐scale neural activity.
High-resolution impedance mapping using electrically activated quantitative phase imaging
Abstract Retrieving electrical impedance maps at the nanoscale rapidly via nondestructive inspection with a high signal-to-noise ratio is an unmet need, likely to impact various applications from biomedicine to energy conversion. In this study, we develop a multimodal functional imaging instrument that is characterized by the dual capability of impedance mapping and phase quantitation, high spatial resolution, and low temporal noise. To achieve this, we advance a quantitative phase imaging system, referred to as epi-magnified image spatial spectrum microscopy combined with electrical actuation, to provide complementary maps of the optical path and electrical impedance. We demonstrate our system with high-resolution maps of optical path differences and electrical impedance variations that can distinguish nanosized, semi-transparent, structured coatings involving two materials with relatively similar electrical properties. We map heterogeneous interfaces corresponding to an indium tin oxide layer exposed by holes with diameters as small as ~550 nm in a titanium (dioxide) over-layer deposited on a glass support. We show that electrical modulation during the phase imaging of a macro-electrode is decisive for retrieving electrical impedance distributions with submicron spatial resolution and beyond the limitations of electrode-based technologies (surface or scanning technologies). The findings, which are substantiated by a theoretical model that fits the experimental data very well enable achieving electro-optical maps with high spatial and temporal resolutions. The virtues and limitations of the novel optoelectrochemical method that provides grounds for a wider range of electrically modulated optical methods for measuring the electric field locally are critically discussed.
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- Award ID(s):
- 1735252
- NSF-PAR ID:
- 10289847
- Date Published:
- Journal Name:
- Light: Science & Applications
- Volume:
- 10
- Issue:
- 1
- ISSN:
- 2047-7538
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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The major focus of artificial intelligence (AI) research is made on biomimetic synaptic processes that are mimicked by functional memory devices in the computer industry [1]. It is urgent to find a memory technology for suiting with Brain-Inspired Computing to break the von Neumann bottleneck which limits the efficiency of conventional computer architectures [2]. Silicon-based flash memory, which currently dominates the market for data storage devices, is facing challenging issues to meet the needs of future data storage device development due to the limitations, such as high-power consumption, high operation voltage, and low retention capacity [1]. The emerging resistive random-access memory (RRAM) has elicited intense research as its simple sandwiched structure, including top electrode (TE) layer, bottom electrode (BE) layer, and an intermediate resistive switching (RS) layer, can store data using RS phenomenon between the high resistance state (HRS) and the low resistance state (LRS). This class of emerging devices is expected to outperform conventional memory devices [3]. Specifically, the advantages of RRAM include low-voltage operation, short programming time, great cyclic stability, and good scalability [4]. Among the materials for RS layer, indium gallium zinc oxide (IGZO) has attracted attention because of its abundance and high atomic diffusion property of oxygen atoms, transparency, and its easily modulated electrical properties by controlling the stoichiometric ratio of indium and gallium as well as oxygen potential in the sputter gas [5, 6]. Moreover, since the IGZO can be applied to both the thin-film transistor (TFT) channel and RS layer, the IGZO-based fully integrated transparent electronics are very promising [5]. In this work, we proposed transparent IGZO-based RRAMs. First, we chose ITO to serve as both TE and BE to achieve high transmittance in the visible regime of light. All three layers (TE, RS, BE layers) were deposited using a multi-target magnetron sputtering system on glass substrates to demonstrate fully transparent oxide-based devices. I-V characteristics were evaluated by a semiconductor parameter analyzer, and our devices showed typical butterfly curves indicating the bipolar RS property. And the IGZO-based RRAM can survive more than 50 continuous sweeping cycles. The optical transmission analysis was carried out via an UV-Vis spectrometer and the average transmittance around 80% out of entire devices in the visible-light wavelength range, implying high transparency. To investigate the thickness dependence on the properties of RS layer, 50nm, 100nm and 150nm RS layer of IGZO RRAM were fabricated. Also, the oxygen partial pressure during the sputtering of IGZO was varied to optimize the property because the oxygen vacancy concentration governs the RS and RRAM performance. Electrode selection is crucial and can impact the performance of the whole device [7]. Thus, Cu TE was chosen for our second type of device because the diffusion of Cu ions can be beneficial for the formation the conductive filament (CF). Finally, a ~5 nm SiO2 barrier layer was employed between TE and RS layers to confine the diffusion of Cu into the RS layer. At the same time, this SiO2 inserting layer can provide an additional interfacial series resistance in the device to lower the off current, consequently, improve the on/off ratio and whole performance. In conclusion, the transparent IGZO-based RRAMs were established. To tune the property of RS layer, the thickness layer and sputtering conditions of RS were adjusted. In order to engineer the diffusion capability of the TE material to the RS layer and the BE, a set of TE materials and a barrier layer were integrated in IGZO-based RRAM and the performance was compared. Our encouraging results clearly demonstrate that IGZO is a promising material in RRAM applications and overcoming the bottleneck of current memory technologies.more » « less
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1038/s41377-020-00461-x
