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Title: High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga 1−x N channel MOSHFET with drain current 0.48 A mm −1 and threshold voltage +3.6 V
Authors:
; ; ; ; ; ;
Award ID(s):
1831954 1711322
Publication Date:
NSF-PAR ID:
10293930
Journal Name:
Applied Physics Express
Volume:
14
Issue:
1
Page Range or eLocation-ID:
014003
ISSN:
1882-0778
Sponsoring Org:
National Science Foundation
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