An official website of the United States government
Alloying is a common technique to optimize the functional properties of materials for thermoelectrics, photovoltaics, energy storage etc. Designing thermoelectric (TE) alloys is especially challenging because it is a multi-property optimization problem, where the properties that contribute to high TE performance are interdependent. In this work, we develop a computational framework that combines first-principles calculations with alloy and point defect modeling to identify alloy compositions that optimize the electronic, thermal, and defect properties. We apply this framework to design n-type Ba 2(1− x ) Sr 2 x CdP 2 Zintl thermoelectric alloys. Our predictions of the crystallographic properties such as lattice parameters and site disorder are validated with experiments. To optimize the conduction band electronic structure, we perform band unfolding to sketch the effective band structures of alloys and find a range of compositions that facilitate band convergence and minimize alloy scattering of electrons. We assess the n-type dopability of the alloys by extending the standard approach for computing point defect energetics in ordered structures. Through the application of this framework, we identify an optimal alloy composition range with the desired electronic and thermal transport properties, and n-type dopability. Such a computational framework can also be used to design alloys for other functional applications beyond TE.
more »
« less
Disorder effects in nitride semiconductors: impact on fundamental and device properties
Abstract Semiconductor structures used for fundamental or device applications most often incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or InGaAlAs material systems, the effects of compositional disorder on the electronic properties can be treated in a perturbative approach. This is not the case in the more recent nitride-based GaInAlN alloys, where the potential changes associated with the various atoms induce strong localization effects, which cannot be described perturbatively. Since the early studies of these materials and devices, disorder effects have indeed been identified to play a major role in their properties. Although many studies have been performed on the structural characterization of materials, on intrinsic electronic localization properties, and on the impact of disorder on device operation, there are still many open questions on all these topics. Taking disorder into account also leads to unmanageable problems in simulations. As a prerequisite to address material and device simulations, a critical examination of experiments must be considered to ensure that one measures intrinsic parameters as these materials are difficult to grow with low defect densities. A specific property of nitride semiconductors that can obscure intrinsic properties is the strong spontaneous and piezoelectric fields. We outline in this review the remaining challenges faced when attempting to fully describe nitride-based material systems, taking the examples of LEDs. The objectives of a better understanding of disorder phenomena are to explain the hidden phenomena often forcing one to use ad hoc parameters, or additional poorly defined concepts, to make simulations agree with experiments. Finally, we describe a novel simulation tool based on a mathematical breakthrough to solve the Schrödinger equation in disordered potentials that facilitates 3D simulations that include alloy disorder.
more »
« less
- Award ID(s):
- 1839077
- PAR ID:
- 10294830
- Date Published:
- Journal Name:
- Nanophotonics
- Volume:
- 10
- Issue:
- 1
- ISSN:
- 2192-8606
- Page Range / eLocation ID:
- 3 to 21
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
null (Ed.)Abstract Alloyed transition metal dichalcogenides provide an opportunity for coupling band engineering with valleytronic phenomena in an atomically-thin platform. However, valley properties in alloys remain largely unexplored. We investigate the valley degree of freedom in monolayer alloys of the phase change candidate material WSe 2(1-x) Te 2x . Low temperature Raman measurements track the alloy-induced transition from the semiconducting 1H phase of WSe 2 to the semimetallic 1T d phase of WTe 2 . We correlate these observations with density functional theory calculations and identify new Raman modes from W-Te vibrations in the 1H-phase alloy. Photoluminescence measurements show ultra-low energy emission features that highlight alloy disorder arising from the large W-Te bond lengths. Interestingly, valley polarization and coherence in alloys survive at high Te compositions and are more robust against temperature than in WSe 2 . These findings illustrate the persistence of valley properties in alloys with highly dissimilar parent compounds and suggest band engineering can be utilized for valleytronic devices.more » « less
-
Abstract Compositionally complex materials have demonstrated extraordinary promise for structural robustness in extreme environments. Of these, the most commonly thought of are high entropy alloys, where chemical complexity grants uncommon combinations of hardness, ductility, and thermal resilience. In contrast to these metal–metal bonded systems, the addition of ionic and covalent bonding has led to the discovery of high entropy ceramics (HECs). These materials also possess outstanding structural, thermal, and chemical robustness but with a far greater variety of functional properties which enable access to continuously controllable magnetic, electronic, and optical phenomena. In this experimentally focused perspective, we outline the potential for HECs in functional applications under extreme environments, where intrinsic stability may provide a new path toward inherently hardened device design. Current works on high entropy carbides, actinide bearing ceramics, and high entropy oxides are reviewed in the areas of radiation, high temperature, and corrosion tolerance where the role of local disorder is shown to create pathways toward self-healing and structural robustness. In this context, new strategies for creating future electronic, magnetic, and optical devices to be operated in harsh environments are outlined.more » « less
-
Bi1−xSbx alloys are classic thermoelectric materials for near-cryogenic applications. Despite more than half a century of study, unraveling the underlying transport physics within this space has been nontrivial due to the complex electronic structure, disorder, and small bandgap within these alloys. Furthermore, as Peltier coolers, Bi1−xSbx alloys operate in a bipolar regime; as such, understanding the impact of minority carriers is critical for further improvements in device performance. This study unites first principles calculations with low-temperature experimental measurements to create a generalized model for transport within semiconducting Bi-Sb alloys. Our exploration reveals the interplay between the complex, degenerate valence band structure with the extremely light conduction bands. By building a hybrid computational/experimental model, an understanding of both the electron and hole relaxation times emerges both as a function of temperature and energy. Special quasi-random supercell calculations reveal that, despite significant atomic disorder, the electronic band structures within the alloy remains largely unaffected and electron–phonon scattering dominates. For charge carriers near the band edges, the relaxation times are thus extremely long, consistent with cyclotronic behavior appearing at low magnetic fields (≪ 1 T). Modeling thermoelectric performance suggests that the valence band edge deformation potential is significantly weaker and highlights the potential for p-type compositions to meet or exceed the current n-type alloys.more » « less
-
Group IV alloy nanocrystals (NCs) are a class of direct energy gap semiconductors that show high elemental abundance, low to non-toxicity, and composition-tunable absorption and emission properties. These properties have distinguished Ge1-xSnx NCs as an intriguing material for near-infrared (IR) optical studies. Achieving a material with efficient visible emission requires a modified class of Group IV alloys and the computational studies suggest that this can be achieved with Ge1-x-ySiySnx NCs. Herein, we report a colloidal strategy for the synthesis of bulk-like (10.3 ± 2.5 – 25.5 ± 5.3 nm) and quantum-confined (3.2 ± 0.6 – 4.2 ± 1.1 nm) Ge1-x-ySiySnx alloys that show strong size confinement effects and composition-tunable visible to near IR absorption and emission properties. This synthesis produces a homogeneous alloy with diamond cubic Ge structure and tunable Si (0.9 – 16.1%) and Sn (1.8 – 14.9%) compositions, exceeding the equilibrium solubility of Sn (<1%) in crystalline Si and Ge. Raman spectra of Ge1-x-ySiySnx alloys show a prominent redshift of the Ge-Ge peak and the emergence of a Ge-Si peak with increasing Si/Sn, suggesting the growth of homogeneous alloys. The smaller Ge1-x-ySiySnx NCs exhibit absorption onsets from 1.21 to 1.94 eV for x = 1.8 – 6.8% and y = 0.9 – 16.1% compositions, which are blueshifted from those reported for Ge1-x-ySiySnx bulk alloy films and Ge1-xSnx alloy NCs, indicating the influence of Si incorporation and strong size confinement effects. Solid-state photoluminescence (PL) spectra reveal core-related PL maxima from 1.77 – 1.97 eV in agreement with absorption onsets, consistent with the energy gaps calculated for ~3–4 nm alloy NCs. With facile low-temperature solution synthesis and direct control over physical properties, this methodology presents a noteworthy advancement in the synthesis of bulk-like and quantum-confined Ge1-x-ySiySnx alloys as versatile materials for future optical and electronic studies.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1515/nanoph-2020-0590
