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Germanium telluride is a high performing thermoelectric material that additionally serves as a base for alloys such as GeTe–AgSbTe 2 and GeTe–PbTe. Such performance motivates exploration of other GeTe alloys in order understand the impact of site substitution on electron and phonon transport. In this work, we consider the root causes of the high thermoelectric performance material Ge 1− x Mn x Te. Along this alloy line, the crystal structure, electronic band structure, and electron and phonon scattering all depend heavily on the Mn content. Structural analysis of special quasirandom alloy structures indicate the thermodynamic stability of the rock salt phase over the rhombohedral phase with increased Mn incorporation. Effective band structure calculations indicate band convergence, the emergence of new valence band maxima, and strong smearing at the band edge with increased Mn content in both phases. High temperature measurements on bulk polycrystalline samples show a reduction in hole mobility and a dramatic increase in effective mass with respect to increasing Mn content. In contrast, synthesis as a function of tellurium chemical potential does not significantly impact electronic properties. Thermal conductivity shows a minimum near the rhombohedral to cubic phase transition, while the Mn Ge point defect scattering is weak as indicated by the low K L dependence on the Ge–Mn fraction (Fig. 10). From this work, alloys near this phase transition show optimal performance due to low thermal conductivity, moderate effective mass, and low scattering rates compared to Mn-rich compositions.
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This content will become publicly available on March 1, 2026
Complex thermoelectric transport in Bi-Sb alloys
Bi1−xSbx alloys are classic thermoelectric materials for near-cryogenic applications. Despite more than half a century of study, unraveling the underlying transport physics within this space has been nontrivial due to the complex electronic structure, disorder, and small bandgap within these alloys. Furthermore, as Peltier coolers, Bi1−xSbx alloys operate in a bipolar regime; as such, understanding the impact of minority carriers is critical for further improvements in device performance. This study unites first principles calculations with low-temperature experimental measurements to create a generalized model for transport within semiconducting Bi-Sb alloys. Our exploration reveals the interplay between the complex, degenerate valence band structure with the extremely light conduction bands. By building a hybrid computational/experimental model, an understanding of both the electron and hole relaxation times emerges both as a function of temperature and energy. Special quasi-random supercell calculations reveal that, despite significant atomic disorder, the electronic band structures within the alloy remains largely unaffected and electron–phonon scattering dominates. For charge carriers near the band edges, the relaxation times are thus extremely long, consistent with cyclotronic behavior appearing at low magnetic fields (≪ 1 T). Modeling thermoelectric performance suggests that the valence band edge deformation potential is significantly weaker and highlights the potential for p-type compositions to meet or exceed the current n-type alloys.
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- Award ID(s):
- 2118201
- PAR ID:
- 10577424
- Publisher / Repository:
- AIP Publishing
- Date Published:
- Journal Name:
- Applied Physics Reviews
- Volume:
- 12
- Issue:
- 1
- ISSN:
- 1931-9401
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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