Using Ag nanowires (NWs) is a promising approach to make flexible and transparent conducting electrodes for organic photovoltaics (OPVs). However, the roughness of the NWs can decrease device performance. Herein, a Ag NW electrode embedded in a UV‐curable epoxy that uses a simple mechanical lift‐off process resulting in highly planar electrodes is demonstrated. A bimodal blend of Ag NWs with varying aspect ratios is used to optimize the transparency and conductivity of the electrode. In addition, a ZnO layer is coated on the Ag NWs prior to the embedding process to ensure low contact resistance in the OPV cells. The resulting resin‐embedded ZnO‐encapsulated silver nanowire (REZEN) electrode is found to have excellent mechanical stability. REZEN electrode‐based OPV cells exhibit comparable performance with reference devices, achieving maximum power conversion efficiency (PCE) of 13.5% and 13.6% respectively. The REZEN‐based OPV cells are also mechanically robust, retaining 97% of their PCE after 5000 cycles at
- Award ID(s):
- 1822206
- NSF-PAR ID:
- 10295081
- Date Published:
- Journal Name:
- ACS applied materials interfaces
- ISSN:
- 1944-8252
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
R = 1.2 mm and 94% PCE after 1000 cycles atR = 0.55 mm. This flexibility is among the highest reported for freestanding devices. Thus, the REZEN electrode is a promising and simple strategy to achieve mechanically robust ITO‐free flexible OPV cells. -
Abstract Fabricating flexible electronics on plastic is often limited by the poor dimensional stability of polymer substrates. To mitigate, glass carriers are used during fabrication, but removing the plastic substrate from a carrier without damaging the electronics remains challenging. Here we utilize a large-area, high-throughput photonic lift-off (PLO) process to rapidly separate polymer films from rigid carriers. PLO uses a 150 µs pulse of broadband light from flashlamps to lift-off functional thin films from glass carrier substrates coated with a light absorber layer (LAL). Modeling indicates that the polymer/LAL interface reaches above 800 °C during PLO, but the top surface of the PI remains below 120 °C. An array of indium zinc oxide (IZO) thin-film transistors (TFTs) was fabricated on a polyimide substrate and photonically lifted off from the glass carrier. The TFT mobility was unchanged by PLO. The flexible TFTs were mechanically robust, with no reduction in mobility while flexed.
-
Abstract The desire for cost-effective strategies for producing organic electronic devices has led to many new methods for the organic semiconductor layer deposition; however, manufacturing contacts remains an expensive technique due to the high cost of both the materials used and the processing necessary for their patterning. In this work, we present a method for contact deposition and patterning, which overcomes these limitations and allows fabrication of all-printed organic thin-film transistors on paper. The method relies on depositing contacts using aerosol spray and patterning them with a digitally printed mask from an office laser printer, at ambient temperature and pressure. This technique, which we have denoted aerosol spray laser lithography, is cost-effective and extremely versatile in terms of material choice and electrode geometry. As the processing temperature does not exceed 155 °C, it is compatible with a variety of substrates, including plastic or paper. The success of this method marks an opportunity for a rapid, scalable, and low-cost alternative to current electrode-manufacturing techniques for development of flexible, large-area, electronic applications.
-
Future high performance PV devices are expected to be tandem cells consisting of a low bandgap bottom cell and a high bandgap top cell. In this study, we developed a cradle-to-end of use life cycle assessment model to evaluate the environmental impacts, primary energy demand (PED), and energy payback time (EPBT) of four integrated two-terminal tandem solar cells composed of either Si bottom and lead-based perovskite (PK Pb ) top cells (Si/PK Pb ), copper indium gallium selenide (CIGS) and PK Pb (CIGS/PK Pb ), copper zinc tin selenide (CZTS) and PK Pb (CZTS/PK Pb ), or tin-lead based perovskite (PK Sn,Pb ) and PK Pb (PK Sn,Pb /PK Pb ). Environmental impacts from single junction Si solar cells were used as a reference point to interpret the results. We found that the environmental impacts for a 1 m 2 area of a cell were largely determined by the bottom cell impacts and ranged from 50% (CZTS/PK Pb ) to 120% of those of a Si cell. The ITO layer used in Si/PK Pb , CZTS/PK Pb , and PK Sn,Pb /PK Pb is the most impactful after the Si and CIGS absorbers, and contributed up to 70% (in PK Sn,Pb /PK Pb ) of the total impacts for these tandem PVs. Manufacturing a single two-terminal device was found to be a more environmentally friendly option than manufacturing two constituent single-junction cells and can reduce the environmental impacts by 30% due to the exclusion of extra glass, encapsulation, front contact and back contact layers. PED analysis indicated that PK Sn,Pb /PK Pb manufacturing has the least energy-intensive processing, and the EPBTs of Si/PK Pb , CIGS/PK Pb , CZTS/PK Pb , and PK Sn,Pb /PK Pb tandems were found to be ∼13, ∼7, ∼2, and ∼1 months, respectively. On an impacts per kW h of Si basis the environmental impacts of all the devices were much higher (up to ∼10 times). These results can be attributed to the low photoconversion efficiency (PCE) and short lifetime that were assumed. While PK Sn,Pb /PK Pb has higher impacts than Si based on current low PCE (21%) and short lifetime (5 years) assumptions, it can outperform Si if its lifetime and PCE reach 16 years and 30%, respectively. Among the configurations considered, the PK Sn,Pb /PK Pb structure has the potential to be the most environmentally friendly technology.more » « less
-
Flexible electronics and mechanically bendable devices based on Group III-N semiconductor materials are emerging; however, there are several challenges in manufacturing, such as cost reduction, device stability and flexibility, and device-performance improvement. To overcome these limitations, it is necessary to replace the brittle and expensive semiconductor wafers with single-crystalline flexible templates for a new-bandgap semiconductor platform. The substrates in the new concept of semiconductor materials have a hybrid structure consisting of a single-crystalline III-N thin film on a flexible metal tape substrate which provides a convenient and scalable roll-to-roll deposition process. We present a detailed study of a unique and simple direct epitaxial growth technique for crystallinity transformation to deliver single-crystalline GaN thin film with highly oriented grains along both a -axis and c -axis directions on a flexible and polycrystalline copper tape. A 2-dimensional (2D) graphene having the same atomic configuration as the (0001) basal plane of wurtzite structure is employed as a seed layer which plays a key role in following the III-N epitaxy growth. The DC reactive magnetron sputtering method is then applied to deposit an AlN layer under optimized conditions to achieve preferred-orientation growth. Finally, single-crystalline GaN layers (∼1 μm) are epitaxially grown using metal organic chemical vapor deposition (MOCVD) on the biaxially-textured buffer layer. The flexible single-crystalline GaN film obtained using this method provides a new way for a wide-bandgap semiconductor platform pursuing flexible, high-performance, and versatile device technology.more » « less