skip to main content


Title: Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape
Flexible electronics and mechanically bendable devices based on Group III-N semiconductor materials are emerging; however, there are several challenges in manufacturing, such as cost reduction, device stability and flexibility, and device-performance improvement. To overcome these limitations, it is necessary to replace the brittle and expensive semiconductor wafers with single-crystalline flexible templates for a new-bandgap semiconductor platform. The substrates in the new concept of semiconductor materials have a hybrid structure consisting of a single-crystalline III-N thin film on a flexible metal tape substrate which provides a convenient and scalable roll-to-roll deposition process. We present a detailed study of a unique and simple direct epitaxial growth technique for crystallinity transformation to deliver single-crystalline GaN thin film with highly oriented grains along both a -axis and c -axis directions on a flexible and polycrystalline copper tape. A 2-dimensional (2D) graphene having the same atomic configuration as the (0001) basal plane of wurtzite structure is employed as a seed layer which plays a key role in following the III-N epitaxy growth. The DC reactive magnetron sputtering method is then applied to deposit an AlN layer under optimized conditions to achieve preferred-orientation growth. Finally, single-crystalline GaN layers (∼1 μm) are epitaxially grown using metal organic chemical vapor deposition (MOCVD) on the biaxially-textured buffer layer. The flexible single-crystalline GaN film obtained using this method provides a new way for a wide-bandgap semiconductor platform pursuing flexible, high-performance, and versatile device technology.  more » « less
Award ID(s):
1907626
NSF-PAR ID:
10310327
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Journal of Materials Chemistry C
Volume:
9
Issue:
7
ISSN:
2050-7526
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor with a bandgap energy of ∼ 4.8 eV and a predicted high critical electric field strength of ∼8 MV/cm, enabling promising applications in next generation high power electronics and deep ultraviolet optoelectronics. The advantages of Ga2O3 also stem from its availability of single crystal bulk native substrates synthesized from melt, and its well-controllable n-type doping from both bulk growth and thin film epitaxy. Among several thin film growth methods, metalorganic chemical vapor deposition (MOCVD) has been demonstrated as an enabling technology for developing high-quality epitaxy of Ga2O3 thin films, (AlxGa1−x)2O3 alloys, and heterostructures along various crystal orientations and with different phases. This tutorial summarizes the recent progresses in the epitaxial growth of β-Ga2O3 thin films via different growth methods, with a focus on the growth of Ga2O3 and its compositional alloys by MOCVD. The challenges for the epitaxial development of β-Ga2O3 are discussed, along with the opportunities of future works to enhance the state-of-the-art device performance based on this emerging UWBG semiconductor material system. 
    more » « less
  2. Epitaxial growth of κ-phase Ga 2 O 3 thin films is investigated on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition. The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure κ-Ga 2 O 3 films are successfully grown on GaN-, AlN-on-sapphire, and YSZ substrates through a systematical tuning of growth parameters including the precursor molar flow rates, chamber pressure, and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of β- and κ-polymorphs of Ga 2 O 3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology, and roughness of κ-Ga 2 O 3 films grown on different substrates are investigated as a function of precursor flow rate. High-resolution scanning transmission electron microscopy imaging of κ-Ga 2 O 3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN, and YSZ substrates. The growth of single crystal orthorhombic κ-Ga 2 O 3 films is confirmed by analyzing the scanning transmission electron microscopy nanodiffraction pattern. The chemical composition, surface stoichiometry, and bandgap energies of κ-Ga 2 O 3 thin films grown on different substrates are studied by high-resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between κ-Ga 2 O 3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with an exception of κ-Ga 2 O 3 /GaN interface, which shows type-I (straddling) band alignment. 
    more » « less
  3. There is a strong drive behind the quest for thin-film materials that are oxygen-free and polar. Oxygen hinders the integration of ferroelectric oxides with semiconductors, which affects efforts to develop nonvolatile memory—that is, a memory that can sustain its information without power. Ideally, one would use single-crystalline perovskite films to construct these devices so that the polarization can be maximized. However, when depositing crystalline polar perovskite oxides onto silicon or germanium, a nonpolar oxide buffer layer ( 1 ) or a native oxide layer ( 2 ) can be present at the interface, compromising device performance. A nitrogen-based perovskite may overcome this limitation ( 3 ). On page 1488 of this issue, Talley et al. ( 4 ) report the synthesis of lanthanum tungsten nitride (LaWN 3 ) thin films, which marks the first demonstration of polar nitride perovskite. This may lead to oxygen-free integration of functional perovskite on a semiconductor platform. 
    more » « less
  4. Abstract

    Photonic integrated circuits require various optical materials with versatile optical properties and easy on‐chip device integration. To address such needs, a well‐designed nanoscale metal‐oxide metamaterial, that is, plasmonic Au nanoparticles embedded in nonlinear LiNbO3(LNO) matrix, is demonstrated with tailorable optical response. Specifically, epitaxial and single‐domain LNO thin films with tailored Au nanoparticle morphologies (i.e., various nanoparticle sizes and densities), are grown by a pulsed laser deposition method. The optical measurement presents obvious surface plasmon resonance and dramatically varied complex dielectric function because of the embedded Au nanoparticles, and its response can be well tailored by varying the size and density of Au nanoparticles. An optical waveguide structure based on the thin film stacks of a‐Si on SiO2/Au‐LNO is fabricated and exhibits low optical dispersion with an optimized evanescent field staying in the LNO‐Au active layer. The hybrid Au‐LNO metamaterial thin films provide a novel platform for tunable optical materials and their future on‐chip integrations in photonic‐based integrated circuits.

     
    more » « less
  5. Abstract

    This paper presents work on the heteroepitaxy of salts, specifically fluorides, on semiconductors and heteroepitaxy of semiconductors on salts. Fluorides layers are deposited on commercial Gallium Arsenide (GaAs) wafers followed by the heteroepitaxial growth of GaAs using metal‐organic chemical vapor deposition (MOCVD). The fluoride layers consist of 2 lattice‐engineered layers of alkaline‐earth compounds to match with GaAs, and are used to sandwich another alkaline‐earth compound with higher water‐solubility as a sacrificial layer. The triple fluoride layers enable liftoff of free‐standing semiconductor films which can be further transferred to desirable substrates. 2D‐X‐ray Diffraction (2D‐XRD) measurements confirm epitaxial growth of both the fluorides and the subsequently grown GaAs films. Single junction (SJ) solar cell devices based on thus prepared films show a power conversion efficiency (PCE) of 10.3% under 1 sun illumination. After the completion of device fabrications, the GaAs film is lifted off from the substrate by a novel water‐assisted epitaxial liftoff (H2O‐ELO) technique and transferred to a cheaper substrate. The original GaAs wafer is recycled and reused twice. Devices based on reused substrates show no significant degradation in performance. The semiconductor‐salt‐semiconductor scheme has great implications in high‐performance, flexible, and large‐area electronics.

     
    more » « less