α-Ga 2 O 3 has the corundum structure analogous to that of α-Al 2 O 3 . The bandgap energy of α-Ga 2 O 3 is 5.3 eV and is greater than that of β-Ga 2 O 3 , making the α-phase attractive for devices that benefit from its wider bandgap. The O–H and O–D centers produced by the implantation of H + and D + into α-Ga 2 O 3 have been studied by infrared spectroscopy and complementary theory. An O–H line at 3269 cm −1 is assigned to H complexed with a Ga vacancy (V Ga ), similar to the case of H trapped by an Al vacancy (V Al ) in α-Al 2 O 3 . The isolated V Ga and V Al defects in α-Ga 2 O 3 and α-Al 2 O 3 are found by theory to have a “shifted” vacancy-interstitial-vacancy equilibrium configuration, similar to V Ga in β-Ga 2 O 3 , which also has shifted structures. However, the addition of H causes the complex with H trapped at an unshifted vacancy to have the lowest energy in both α-Ga 2 O 3 and α-Al 2 O 3 .
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Deciphering the dual emission in the photoluminescence of Au 14 Cd(SR) 12 : A theoretical study using TDDFT and TDDFT + TB
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The UCNA experiment was designed to measure the neutron β-asymmetry parameter A 0 using polarized ultracold neutrons (UCN). UCN produced via downscattering in solid deuterium were polarized via transport through a 7 T magnetic field, and then directed to a 1 T solenoidal electron spectrometer, where the decay electrons were detected in electron detector packages located on the two ends of the spectrometer. A value for A 0 was then extracted from the asymmetry in the numbers of counts in the two detector packages. We summarize all of the results from the UCNA experiment, obtained during run periods in 2007, 2008–2009, 2010, and 2011–2013, which ultimately culminated in a 0.67% precision result for A 0 .more » « less
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