More Like this

1. Spin–orbit torque switching in a single (Ga,Mn)(As,P) layer with perpendicular magnetic anisotropy

   https://doi.org/10.1063/5.0064236  

   Park, Seongjin; Lee, Kyung_Jae; Lee, Sanghoon; Liu, Xinyu; Dobrowolska, Margaret; Furdyna, Jacek_K (October 2021, APL Materials)

   We report the observation of current induced spin–orbit torque (SOT) switching of magnetization in a (Ga,Mn)(As,P) film using perpendicular magnetic anisotropy. Complete SOT switching of magnetization was achieved with current densities as low as 7.4 × 105 A/cm2, which is one to two orders of magnitude smaller than that normally used for SOT switching in ferromagnet/heavy metal bilayer systems. The observed magnetization switching chirality during current scans is consistent with SOT arising from spin polarization caused by the Dresselhaus-type spin–orbit-induced (SOI) fields. The magnitudes of effective SOI fields corresponding to the SOT were obtained from shifts of switching angles in angular dependent Hall measurements observed for opposite current polarities. By measuring effective SOI fields for the [11̄0] and the [110] current directions, we were then able to separate the values of the Dresselhaus-type (HeffD) and Rashba (HeffR) SOI fields. At a current density of 6.0 × 105 A/cm2, these values are HeffD=6.73Oe and HeffR=1.31Oe, respectively. The observed ratio of about 5:1 between Dresselhaus-type and Rashba SOI fields is similar to that observed in a GaMnAs film with an in-plane magnetic anisotropy. 

   more » « less
2. Probing magnetic anisotropy in epitaxial La0.67Sr0.33MnO3 thin films and nanostructures via planar Hall effect

   https://doi.org/10.1117/12.2319249  

   Hong, Xia; Zhang, Le; Rajapitamahuni, Anil; Hao, Yifei; Jaffrès, Henri; Drouhin, Henri-Jean; Wegrowe, Jean-Eric; Razeghi, Manijeh (September 2018, Proceedings of SPIE)

   The ability to control and manipulate magnetic anisotropy in the colossal magnetoresistive (CMR) oxide (La,Sr)MnO3 (LSMO) is critical for its implementation in magnetic memory applications. In this work, we employ the planar Hall effect (PHE) as a powerful tool to probe the magnetic anisotropy in LSMO thin films and nanostructures, where the magnetization is too small to be detected by conventional magnetometry techniques. By analyzing the angular- and magnetic field-dependences of the PHE, we deduced an in-plane biaxial magnetocrystalline anisotropy (MCA) energy of ~1.2x10^5 erg/cm^2 in LSMO thin films fully strained on (001) SrTiO3 substrates. Creating nanoscale periodic depth modulation in LSMO establishes a uniaxial anisotropy with substantially enhanced MCA energy density, which is attributed to a high strain gradient sustained in the nanostructure. The energy competition between the biaxial and uniaxial MCA leads to multi-level resistance switching behavior in properly engineered LSMO nanostructures, which can be utilized to design the switching dynamics in magnetic memory devices. Our work points to the critical role of epitaxial strain in determining the MCA in CMR oxides, and provides an effective material strategy for engineering the magnetic properties of LSMO for novel spintronic applications with high thermal stability and high density data storage. 

   more » « less
3. Sagnac interferometry for high-sensitivity optical measurements of spin-orbit torque

   Karimeddiny, Saba; Cham, Thow Min; Ralph, Daniel C.; Luo, Yunqiu Kelly (September 2021, ArXivorg)

   null (Ed.)

   We adapt Sagnac interferometry for magneto-optic Kerr effect measurements of spin-orbit-torque-induced magnetic tilting in thin-film magnetic samples. The high sensitivity of Sagnac interferometry permits for the first time optical quantification of spin-orbit torque from small-angle magnetic tilting of samples with perpendicular magnetic anisotropy (PMA). We find significant disagreement between Sagnac measurements and simultaneously-performed harmonic Hall (HH) measurements of spin-orbit torque on Pt/Co/MgO and Pd/Co/MgO samples with PMA. The Sagnac results for PMA samples are consistent with both HH and Sagnac measurements for the in-plane geometry, so we conclude that the conventional analysis framework for PMA HH measurements is flawed. We suggest that the explanation for this discrepancy is that although magnetic-field induced magnetic tilting in PMA samples can produce a strong planar Hall effect, when tilting is instead generated by spin-orbit torque it produces negligible change in the planar Hall signal. This very surprising result demonstrates an error in the most-popular method for measuring spin-orbit torques in PMA samples, and represents an unsolved puzzle in understanding the planar Hall effect in magnetic thin films. 

   more » « less
4. Voltage controlled Néel vector rotation in zero magnetic field

   https://doi.org/10.1038/s41467-021-21872-3  

   Mahmood, Ather; Echtenkamp, Will; Street, Mike; Wang, Jun-Lei; Cao, Shi; Komesu, Takashi; Dowben, Peter A.; Buragohain, Pratyush; Lu, Haidong; Gruverman, Alexei; et al (December 2021, Nature Communications)

   null (Ed.)

   Abstract Multi-functional thin films of boron (B) doped Cr 2 O 3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H . Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr 2 O 3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent T N and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H  = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr 2 O 3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications. 

   more » « less
5. Large magnetic anisotropy and magnetostriction in thin films of ${\mathrm{CoV}}_2{\mathrm{O}}_4$

   https://doi.org/10.1103/PhysRevMaterials.7.014408  

   Kim, Sangsoo; Thompson, Christie J.; Xin, Yan; Beekman, Christianne (January 2023, Physical Review Materials)

   Spinel cobalt vanadate CoV2O4 has been grown on (001) SrTiO3 substrates. Using torque magnetometry experiments, we find that the previously observed temperature-induced anisotropy change, where the easy axis changes from the out-of-plane [001] direction to a biaxial anisotropy with planar <100> easy axes, occurs in a gradual second-order structural phase transition. This paper characterizes this transition and the magnetic anisotropies in the (001), (100), and (-110) rotation planes, and explores their field dependence up to 30 T. Below 80 K, hysteretic features appear around the hard axes, i.e., the out-of-plane direction in (-110) and (010) rotations and the planar <110> directions in (001) rotations. This is due to a Zeeman energy that originates from the lag of the magnetization with respect to the applied magnetic field as the sample is rotated. The appearance of the hysteresis, which persists up to very high fields, shows that the anisotropy at low temperature is rather strong. Additionally, field-dependent distortions to the symmetry of the torque response in increasing applied fields shows that magnetostriction plays a large role in determining the direction and magnitude of the anisotropy. 

   more » « less