The mixed tin (Sn) and lead (Pb) perovskite compositions have shown great potential in perovskite photovoltaic devices due to the significantly enhanced material stability and prolonged carrier lifetime, compared to the pure Sn halide perovskites. In spite of the increasing interest, the behaviors of photo-generated charges and of the intrinsic point defects, such as the metal cation vacancies (V Sn and V Pb ) and the interstitial halogen (i I ), have not been well understood in this class of materials. We report first-principles density functional theory (DFT) calculations combined with ab initio non-adiabatic molecular dynamics (NAMD) simulations on the static and dynamic structures of MA 2 SnPbI 6 with and without these intrinsic defects. We discuss the nature of the defect states and unveil the influence of the intrinsic point defects on the structure, optoelectronic properties, and charge carrier dynamics of MA 2 SnPbI 6 . The i I defect significantly shortens the carrier lifetime by creating mid-gap states that provide new recombination pathways. In comparison, the vacancy defects have much weaker influence on the carrier lifetime. Both V Sn and V Pb produce the defect states just below the valence band maxima (VBMs), and do not alter themore »
A Metastable p-Type Semiconductor as a Defect-Tolerant Photoelectrode
A p-type Cu3Ta7O19 semiconductor was synthesized using a CuCl flux-based approach and investigated for its crystalline structure and photoelectrochemical properties. The semiconductor was found to be metastable, i.e., thermodynamically unstable, and to slowly oxidize at its surfaces upon heating in air, yielding CuO as nano-sized islands. However, the bulk crystalline structure was maintained, with up to 50% Cu(I)-vacancies and a concomitant oxidation of the Cu(I) to Cu(II) cations within the structure. Thermogravimetric and magnetic susceptibility measurements showed the formation of increasing amounts of Cu(II) cations, according to the following reaction: Cu3Ta7O19 + x/2 O2 → Cu(3−x)Ta7O19 + x CuO (surface) (x = 0 to ~0.8). With minor amounts of surface oxidation, the cathodic photocurrents of the polycrystalline films increase significantly, from <0.1 mA cm−2 up to >0.5 mA cm−2, under visible-light irradiation (pH = 6.3; irradiant powder density of ~500 mW cm−2) at an applied bias of −0.6 V vs. SCE. Electronic structure calculations revealed that its defect tolerance arises from the antibonding nature of its valence band edge, with the formation of defect states in resonance with the valence band, rather than as mid-gap states that function as recombination centers. Thus, the metastable Cu(I)-containing semiconductor was demonstrated to possess more »
- Award ID(s):
- 2004455
- Publication Date:
- NSF-PAR ID:
- 10301958
- Journal Name:
- Molecules
- Volume:
- 26
- Issue:
- 22
- Page Range or eLocation-ID:
- 6830
- ISSN:
- 1420-3049
- Sponsoring Org:
- National Science Foundation
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