Traditional synthetic efforts to prepare Eu(II)-containing oxides have principally involved the use of high temperature reactions starting from EuO or a controlled, highly-reducing, atmosphere. Conversely, chimie douce approaches that are more amenable to the targeted syntheses of new, and potentially metastable, Eu(II)-oxides have yet to be explored. Herein, a cation-exchange route to new Eu(II)-containing oxides, e.g., EuTa4-xO11 (x = 0.04), has been discovered and its structure
determined by powder X-ray diffraction (Space group P6322 (#182), a = 6.2539(2) Å; c = 12.3417(2) Å). The compound derives from the cation exchange of Na2Ta4O11, via a reaction with EuBr2 at 1173 K, and replacement by half the number of divalent Eu cations. Rietveld refinements show preferential ordering of the Eu cations over one of the two possible cation sites, i.e., Wyckoff site 2d (~94%; Eu1) versus 2b (~6%; Eu2). Total energy calculations confirm an energetic preference of
the Eu cation in the 2d site. Tantalum vacancies of ~1% occur within the layer of Eu cations and TaO6 octahedra, and ~20% partial oxidation of Eu(II) to Eu(III) cations from charge balance considerations. 151Eu M¨ossbauer spectroscopy measured at 78 K found a Eu(II):Eu(III) ratio of 69:31, with a relatively broad line width of the former signal of Γ = 7.6(2) mm s–1. Also, the temperature-dependent magnetic susceptibility could be fitted to a Curie Weiss expression, giving a μeff = 6.2 μB and
θCW = 10 K and confirming a mixture of Eu(II)/Eu(III) cations. The optical bandgap of EuTa4-xO11 was found to be ~1.5 eV (indirect), significantly redshifted as compared to ~4.1 eV for Na2Ta4O11. Spin-polarized electronic structure calculations show that this redshift stems from the addition of Eu 4f7 states as a higher-energy valence band. Thus, these results demonstrate a new cation-exchange approach that represents a useful synthetic pathway to new Eu(II)-containing ox-
ides for tunable magnetic and optical properties.
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A Metastable p-Type Semiconductor as a Defect-Tolerant Photoelectrode
A p-type Cu3Ta7O19 semiconductor was synthesized using a CuCl flux-based approach and investigated for its crystalline structure and photoelectrochemical properties. The semiconductor was found to be metastable, i.e., thermodynamically unstable, and to slowly oxidize at its surfaces upon heating in air, yielding CuO as nano-sized islands. However, the bulk crystalline structure was maintained, with up to 50% Cu(I)-vacancies and a concomitant oxidation of the Cu(I) to Cu(II) cations within the structure. Thermogravimetric and magnetic susceptibility measurements showed the formation of increasing amounts of Cu(II) cations, according to the following reaction: Cu3Ta7O19 + x/2 O2 → Cu(3−x)Ta7O19 + x CuO (surface) (x = 0 to ~0.8). With minor amounts of surface oxidation, the cathodic photocurrents of the polycrystalline films increase significantly, from <0.1 mA cm−2 up to >0.5 mA cm−2, under visible-light irradiation (pH = 6.3; irradiant powder density of ~500 mW cm−2) at an applied bias of −0.6 V vs. SCE. Electronic structure calculations revealed that its defect tolerance arises from the antibonding nature of its valence band edge, with the formation of defect states in resonance with the valence band, rather than as mid-gap states that function as recombination centers. Thus, the metastable Cu(I)-containing semiconductor was demonstrated to possess a high defect tolerance, which facilitates its high cathodic photocurrents.
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- Award ID(s):
- 2004455
- NSF-PAR ID:
- 10301958
- Date Published:
- Journal Name:
- Molecules
- Volume:
- 26
- Issue:
- 22
- ISSN:
- 1420-3049
- Page Range / eLocation ID:
- 6830
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/molecules26226830
