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A Verilog-A based model for the magneto-electric field effect transistor (MEFET) device is implemented and a variety of logic functions based on this device are proposed. These models are used to capture energy consumption and delay per switching event and to benchmark the MEFET with respect to CMOS. Single-source MEFET devices can be used for conventional logic gates like NAND, NOR, inverter and buffer and more complex circuits like the full adder. The dual source MEFET is an enhanced version of the MEFET device which functions like a spin multiplexer (spin-MUXer). Circuits using MEFETs require fewer components than CMOS to generate the same logic operation. These devices display a high on-off ratio., unlike many magneto-electric devices., and they operate at very low voltages., resulting in lower switching energy. Benchmarking results show that these devices perform better in terms of energy and delay., for implementing more complex functions., than the basic logic gates.
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Magneto-electric Transistor Devices and Circuits with Steering Logic
Magneto-electric transistor (MEFET) schemes are voltage-controlled spintronic devices. Introduced here is a onesource two-drain magneto-electric MEFET, such that each gate has two outputs. This allows logic to be configured with a steering function, switching the electron flux to one of two outputs termed “steering logic". The result is a highly efficient and simple scheme for logic implementation. A majority gate can be constructed with four components (four single input devices) but with only one leakage path and requiring only a single clock cycle to complete the function.
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- Award ID(s):
- 1740136
- PAR ID:
- 10302190
- Date Published:
- Journal Name:
- 020 IEEE 14th Dallas Circuits and Systems Conference (DCAS)
- Page Range / eLocation ID:
- 1 to 4
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1109/DCAS51144.2020.9330662
