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Title: Mid-infrared intersubband absorption in strain-balanced non-polar (In)AlGaN/InGaN multi-quantum wells

Mid-infrared intersubband transitions in strain-balanced m-plane (In)AlxGa1-xN/In0.16Ga0.84N (0.19≤x≤0.3) multi-quantum wells are reported for the first time in the range of 3.4–5.1 µm (244–360 meV). Direct and attenuated total-reflection infrared absorption measurements are interpreted using structural information revealed by high-resolution x-ray diffraction and transmission electron microanalysis. The experimental intersubband energies are better reproduced by calculations using the local-density approximation than the Hartree-Fock approximation for the exchange-correlation correction. The effect of charge density, quantum well width, and barrier alloy composition on the intersubband transition energy is also investigated to evaluate the potential of this material for practical device applications.

 
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Award ID(s):
2004462
NSF-PAR ID:
10307308
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
Optical Society of America
Date Published:
Journal Name:
Optical Materials Express
Volume:
11
Issue:
9
ISSN:
2159-3930
Page Range / eLocation ID:
Article No. 3284
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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