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1. (Invited) Oxide Electronics and Recent Progress in Bipolar Applications

   https://doi.org/10.1149/MA2022-01191071mtgabs  

   Lee, Sunghwan ; Lee, Donghun ; Qin, Fei ; Zhang, Yuxuan ; Rothschild, Molly ; Song, Han Wook ; No, Kwangsoo ( July 2022 , ECS Meeting Abstracts)

   The discovery of oxide electronics is of increasing importance today as one of the most promising new technologies and manufacturing processes for a variety of electronic and optoelectronic applications such as next-generation displays, batteries, solar cells, memory devices, and photodetectors[1]. The high potential use seen in oxide electronics is due primarily to their high carrier mobilities and their ability to be fabricated at low temperatures[2]. However, since the majority of oxide semiconductors are n-type oxides, current applications are limited to unipolar devices, eventually developing oxide-based bipolar devices such as p-n diodes and complementary metal-oxide semiconductors. We have contributed to amore »wide range of oxide semiconductors and their electronics and optoelectronic device applications. Particularly, we have demonstrated n-type oxide-based thin film transistors (TFT), integrating In 2 O 3 -based n-type oxide semiconductors from binary cation materials to ternary cation species including InZnO, InGaZnO (IGZO), and InAlZnO. We have suggested channel/metallization contact strategies to achieve stable and high TFT performance[3, 4], identified vacancy-based native defect doping mechanisms[5], suggested interfacial buffer layers to promote charge injection capability[6], and established the role of third cation species on the carrier generation and carrier transport[7]. More recently, we have reported facile manufacturing of p-type SnOx through reactive magnetron sputtering from a Sn metal target[8]. The fabricated p-SnOx was found to be devoid of metallic phase of Sn from x-ray photoelectron spectroscopy and demonstrated stable performance in a fully oxide-based p-n heterojunction together with n-InGaZnO. The oxide-based p-n junctions exhibited a high rectification ratio greater than 10 3 at ±3 V, a low saturation current of ~2x10 -10 , and a small turn-on voltage of -0.5 V. In this presentation, we review recent achievements and still remaining issues in transition metal oxide semiconductors and their device applications, in particular, bipolar applications including p-n heterostructures and complementary metal-oxide-semiconductor devices as well as single polarity devices such as TFTs and memristors. In addition, the fundamental mechanisms of carrier transport behaviors and doping mechanisms that govern the performance of these oxide-based devices will also be discussed. ACKNOWLEDGMENT This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 20011028) by KRISS. K.N. was supported by Basic Science Research Program (NRF-2021R11A1A01051246) through the NRF Korea funded by the Ministry of Education. REFERENCES [1] K. Nomura et al. , Nature, vol. 432, no. 7016, pp. 488-492, Nov 25 2004. [2] D. C. Paine et al. , Thin Solid Films, vol. 516, no. 17, pp. 5894-5898, Jul 1 2008. [3] S. Lee et al. , Journal of Applied Physics, vol. 109, no. 6, p. 063702, Mar 15 2011, Art. no. 063702. [4] S. Lee et al. , Applied Physics Letters, vol. 104, no. 25, p. 252103, 2014. [5] S. Lee et al. , Applied Physics Letters, vol. 102, no. 5, p. 052101, Feb 4 2013, Art. no. 052101. [6] M. Liu et al. , ACS Applied Electronic Materials, vol. 3, no. 6, pp. 2703-2711, 2021/06/22 2021. [7] A. Reed et al. , Journal of Materials Chemistry C, 10.1039/D0TC02655G vol. 8, no. 39, pp. 13798-13810, 2020. [8] D. H. Lee et al. , ACS Applied Materials & Interfaces, vol. 13, no. 46, pp. 55676-55686, 2021/11/24 2021.« less
2. Sensitivity to neutrinos from the solar CNO cycle in Borexino

   https://doi.org/10.1140/epjc/s10052-020-08534-2  

   Agostini, M. ; Altenmüller, K. ; Appel, S. ; Atroshchenko, V. ; Bagdasarian, Z. ; Basilico, D. ; Bellini, G. ; Benziger, J. ; Biondi, R. ; Bravo, D. ; et al ( November 2020 , The European Physical Journal C)

   Abstract Neutrinos emitted in the carbon, nitrogen, oxygen (CNO) fusion cycle in the Sun are a sub-dominant, yet crucial component of solar neutrinos whose flux has not been measured yet. The Borexino experiment at the Laboratori Nazionali del Gran Sasso (Italy) has a unique opportunity to detect them directly thanks to the detector’s radiopurity and the precise understanding of the detector backgrounds. We discuss the sensitivity of Borexino to CNO neutrinos, which is based on the strategies we adopted to constrain the rates of the two most relevant background sources, $$pep$$ pep neutrinos from the solar pp -chain and $$^{210}$$more »210 Bi beta decays originating in the intrinsic contamination of the liquid scintillator with $$^{210}$$ 210 Pb. Assuming the CNO flux predicted by the high-metallicity Standard Solar Model and an exposure of 1000 days $$\times $$ × 71.3 t, Borexino has a median sensitivity to CNO neutrino higher than 3 $$\sigma $$ σ . With the same hypothesis the expected experimental uncertainty on the CNO neutrino flux is 23%, provided the uncertainty on the independent estimate of the $$^{210}\text {Bi}$$ 210 Bi  interaction rate is 1.5 $$\hbox {cpd}/100~\hbox {ton}$$ cpd / 100 ton  . Finally, we evaluated the expected uncertainty of the C and N abundances and the expected discrimination significance between the high and low metallicity Standard Solar Models (HZ and LZ) with future more precise measurement of the CNO solar neutrino flux.« less
3. New Projections for Dark Matter Searches with Paleo-Detectors

   https://doi.org/10.3390/instruments5020021  

   Baum, Sebastian ;  Edwards, Thomas D. P. ; Freese, Katherine ; Stengel, Patrick ( June 2021 , Instruments)

   Paleo-detectors are a proposed experimental technique to search for dark matter (DM). In lieu of the conventional approach of operating a tonne-scale real-time detector to search for DM-induced nuclear recoils, paleo-detectors take advantage of small samples of naturally occurring rocks on Earth that have been deep underground (≳5 km), accumulating nuclear damage tracks from recoiling nuclei for O(1)Gyr. Modern microscopy techniques promise the capability to read out nuclear damage tracks with nanometer resolution in macroscopic samples. Thanks to their O(1)Gyr integration times, paleo-detectors could constitute nuclear recoil detectors with keV recoil energy thresholds and 100 kilotonne-yr exposures. This combination wouldmore »allow paleo-detectors to probe DM-nucleon cross sections orders of magnitude below existing upper limits from conventional direct detection experiments. In this article, we use improved background modeling and a new spectral analysis technique to update the sensitivity forecast for paleo-detectors. We demonstrate the robustness of the sensitivity forecast to the (lack of) ancillary measurements of the age of the samples and the parameters controlling the backgrounds, systematic mismodeling of the spectral shape of the backgrounds, and the radiopurity of the mineral samples. Specifically, we demonstrate that even if the uranium concentration in paleo-detector samples is 10−8 (per weight), many orders of magnitude larger than what we expect in the most radiopure samples obtained from ultra basic rock or marine evaporite deposits, paleo-detectors could still probe DM-nucleon cross sections below current limits. For DM masses ≲ 10 GeV/c2, the sensitivity of paleo-detectors could still reach down all the way to the conventional neutrino floor in a Xe-based direct detection experiment.« less
4. Sensitivity of the DARWIN observatory to the neutrinoless double beta decay of $$^{136}$$Xe

   https://doi.org/10.1140/epjc/s10052-020-8196-z  

   Agostini, F. ; Maouloud, S. E. ; Althueser, L. ; Amaro, F. ; Antunovic, B. ; Aprile, E. ; Baudis, L. ; Baur, D. ; Biondi, Y. ; Bismark, A. ; et al ( September 2020 , The European Physical Journal C)

   Abstract The DARWIN observatory is a proposed next-generation experiment to search for particle dark matter and for the neutrinoless double beta decay of $$^{136}$$ 136 Xe. Out of its 50 t total natural xenon inventory, 40 t will be the active target of a time projection chamber which thus contains about 3.6 t of $$^{136}$$ 136 Xe. Here, we show that its projected half-life sensitivity is $$2.4\times {10}^{27}\,{\hbox {year}}$$ 2.4 × 10 27 year , using a fiducial volume of 5 t of natural xenon and 10 year of operation with a background rate of less than 0.2 events/(t  $$\cdot $$ ·  year) in the energymore »region of interest. This sensitivity is based on a detailed Monte Carlo simulation study of the background and event topologies in the large, homogeneous target. DARWIN will be comparable in its science reach to dedicated double beta decay experiments using xenon enriched in $$^{136}$$ 136 Xe.« less
5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments andmore »modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less