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This content will become publicly available on March 5, 2026

Title: Rapid Thermal Selenization Enhanced Efficiency in Sb2Se3 Thin Film Solar Cells with Superstrate Configuration
Antimony selenide (Sb2Se3) is a promising material for solar energy conversion due to its low toxicity, high stability, and excellent light absorption capabilities. However, Sb2Se3 films produced via physical vapor deposition often exhibit Se-deficient surfaces, which result in a high carrier recombination and poor device performance. The conventional selenization process was used to address selenium loss in Sb2Se3 solar cells with a substrate configuration. However, this traditional selenization method is not suitable for superstrated Sb2Se3 devices with the window layer buried underneath the Sb2Se3 light absorber layer, as it can lead to significant diffusion of the window layer material into Sb2Se3 and damage the device. In this work, we have demonstrated a rapid thermal selenization (RTS) technique that can effectively selenize the Sb2Se3 absorber layer while preventing the S diffusion from the buried CdS window layer into the Sb2Se3 absorber layer. The RTS technique significantly reduces carrier recombination loss and carrier transport resistance and can achieve the highest efficiency of 8.25%. Overall, the RTS method presents a promising approach for enhancing low-dimensional chalcogenide thin films for emerging superstrate chalcogenide solar cell applications.  more » « less
Award ID(s):
2413632 1753054 2226908
PAR ID:
10608435
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Publisher / Repository:
ACS Applied Materials & Interfaces
Date Published:
Journal Name:
ACS Applied Materials & Interfaces
Volume:
17
Issue:
9
ISSN:
1944-8244
Page Range / eLocation ID:
13814 to 13823
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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