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Title: Extremely anisotropic van der Waals thermal conductors
Abstract The densification of integrated circuits requires thermal management strategies and high thermal conductivity materials 1–3 . Recent innovations include the development of materials with thermal conduction anisotropy, which can remove hotspots along the fast-axis direction and provide thermal insulation along the slow axis 4,5 . However, most artificially engineered thermal conductors have anisotropy ratios much smaller than those seen in naturally anisotropic materials. Here we report extremely anisotropic thermal conductors based on large-area van der Waals thin films with random interlayer rotations, which produce a room-temperature thermal anisotropy ratio close to 900 in MoS 2 , one of the highest ever reported. This is enabled by the interlayer rotations that impede the through-plane thermal transport, while the long-range intralayer crystallinity maintains high in-plane thermal conductivity. We measure ultralow thermal conductivities in the through-plane direction for MoS 2 (57 ± 3 mW m −1  K −1 ) and WS 2 (41 ± 3 mW m −1  K −1 ) films, and we quantitatively explain these values using molecular dynamics simulations that reveal one-dimensional glass-like thermal transport. Conversely, the in-plane thermal conductivity in these MoS 2 films is close to the single-crystal value. Covering nanofabricated gold electrodes with our anisotropic films prevents overheating of the electrodes and blocks heat from more » reaching the device surface. Our work establishes interlayer rotation in crystalline layered materials as a new degree of freedom for engineering-directed heat transport in solid-state systems. « less
Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;
Award ID(s):
1719875 2011854
Publication Date:
NSF-PAR ID:
10325399
Journal Name:
Nature
Volume:
597
Issue:
7878
Page Range or eLocation-ID:
660 to 665
ISSN:
0028-0836
Sponsoring Org:
National Science Foundation
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