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Title: Impurity-hydrogen complexes in β-Ga2O3: Hydrogenation of shallow donors vs deep acceptors
Substitutional impurities in Ga2O3 are used to make the material n-type or semi-insulating. Several O-D vibrational lines for OD-impurity complexes that involve impurities that are shallow donors and deep acceptors have been reported recently. The present paper compares and contrasts the vibrational properties of complexes that involve shallow donors (OD-Si and OD-Ge) with complexes that involve deep acceptors (OD-Fe and OD-Mg). Complementary theory investigates the microscopic structures of defects that can explain the observed vibrational properties.  more » « less
Award ID(s):
1901563
NSF-PAR ID:
10328663
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Journal of applied physics
Volume:
131
ISSN:
0021-8979
Page Range / eLocation ID:
035706
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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