Abstract Atomic force microscope (AFM)-based nanolithography is a cost-effective nanopatterning technique that can fabricate nanostructures with arbitrary shapes. However, existing AFM-based nanopatterning approaches have limitations in the patterning resolution and efficiency. Minimum feature size and machining performance in the mechanical force-induced nanofabrication process are limited by the radius and sharpness of the AFM tip. Electric-field-assisted atomic force microscope (E-AFM) nanolithography can fabricate nanopatterns with features smaller than the tip radius, but it is very challenging to find the appropriate input parameter window. The tip bias range in E-AFM process is typically very small and varies for each AFM tip due to the variations in tip geometry, tip end diameter, and tip conductive coating thickness. This paper demonstrates a novel electric-field and mechanical vibration-assisted AFM-based nanofabrication approach, which enables high-resolution (sub-10 nm toward sub-5 nm) and high-efficiency nanopatterning processes. The integration of in-plane vibration with the electric field increases the patterning speed, broadens the selectable ranges of applied voltages, and reduces the minimum tip bias required for nanopatterning as compared with E-AFM process, which significantly increases the versatility and capability of AFM-based nanopatterning and effectively avoids the tip damage.
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Electric-Field-Assisted Contact Mode AFM-Based Nanolithography with Low Stiffness Conductive Probes
Abstract Electric-field-assisted atomic force microscope (E-AFM) nanolithography is a novel polymer-patterning technique that has diverse applications. E-AFM uses a biased AFM tip with conductive coatings to make patterns with little probe-sample interaction, which thereby avoids the tip wear that is a major issue for contact-mode AFM-based lithography, which usually requires a high probe-sample contact force to fabricate nanopatterns; however, the relatively large tip radius and large tip-sample separation limit its capacity to fabricate high-resolution nanopatterns. In this paper, we developed a contact mode E-AFM nanolithography approach to achieve high-resolution nanolithography of poly (methyl methacrylate) (PMMA) using a conductive AFM probe with a low stiffness (~0.16 N/m). The nanolithography process generates features by biasing the AFM probe across a thin polymer film on a metal substrate. A small constant force (0.5-1 nN) applied on the AFM tip helps engage the tip-film contact, which enhances nanomachining resolution. This E-AFM nanolithography approach enables high-resolution nanopatterning with feature width down to ~16 nm, which is less than one half of the nominal tip radius of the employed conductive AFM probes.
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- Award ID(s):
- 2006127
- PAR ID:
- 10329896
- Date Published:
- Journal Name:
- Journal of Micro and Nano-Manufacturing
- ISSN:
- 2166-0468
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Resolution and field-of-view often represent a fundamental tradeoff in microscopy. Atomic force microscopy (AFM), in which a cantilevered probe deflects under the influence of local forces as it scans across a substrate, is a key example of this tradeoff with high resolution imaging being largely limited to small areas. Despite the tremendous impact of AFM in fields including materials science, biology, and surface science, the limitation in imaging area has remained a key barrier to studying samples with intricate hierarchical structure. Here, we show that massively parallel AFM with >1000 probes is possible through the combination of a cantilever-free probe architecture and a scalable optical method for detecting probe–sample contact. Specifically, optically reflective conical probes on a comparatively compliant film are found to comprise a distributed optical lever that translates probe motion into an optical signal that provides sub-10 nm vertical precision. The scalability of this approach makes it well suited for imaging applications that require high resolution over large areas.
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Abstract Controlling nanoscale tip‐induced material removal is crucial for achieving atomic‐level precision in tomographic sensing with atomic force microscopy (AFM). While advances have enabled volumetric probing of conductive features with nanometer accuracy in solid‐state devices, materials, and photovoltaics, limitations in spatial resolution and volumetric sensitivity persist. This work identifies and addresses in‐plane and vertical tip‐sample junction leakage as sources of parasitic contrast in tomographic AFM, hindering real‐space 3D reconstructions. Novel strategies are proposed to overcome these limitations. First, the contrast mechanisms analyzing nanosized conductive features are explored when confining current collection purely to in‐plane transport, thus allowing reconstruction with a reduction in the overestimation of the lateral dimensions. Furthermore, an adaptive tip‐sample biasing scheme is demonstrated for the mitigation of a class of artefacts induced by the high electric field inside the thin oxide when volumetrically reduced. This significantly enhances vertical sensitivity by approaching the intrinsic limits set by quantum tunneling processes, allowing detailed depth analysis in thin dielectrics. The effectiveness of these methods is showcased in tomographic reconstructions of conductive filaments in valence change memory, highlighting the potential for application in nanoelectronics devices and bulk materials and unlocking new limits for tomographic AFM.
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1115/1.4054316
