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   Elton, Eric S.; Tibrewala, Yash; Rosenberg, Ethan R.; Hamlin, Brad S.; Ristenpart, William D. (November 2017, Langmuir)
2. MEDAC: A Metastability Condition Detection and Correction Technique for a Near-Threshold-Voltage Multi-Voltage-/Frequency-Domain Network-on-Chip

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3. MPAM: Reliable, Low-Latency, Near-Threshold-Voltage Multi-Voltage/Frequency-Domain Network-on-Chip with Metastability Risk Prediction and Mitigation

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   Emerging applications like a drone and an autonomous vehicle require system-on-a-chips (SoCs) with high reliability, e.g., the mean-time-between-failure (MTBF) needs to be over tens of thousands of hours [1]. Meanwhile, as these applications require increasingly higher performance and energy efficiency, a multi-core architecture is often desirable. Here, each core operates in an independent voltage/frequency (V/F) domain, ideally from the near-threshold voltage (NTV) to super-threshold, while communicating with one another via a network-on-chip (NoC) [2]. However, this makes it challenging to ensure robustness in clock domain crossing against metastability. Metastability becomes even more critical to NTV circuits since metastability resolution time constant T grows super-linearly with voltage scaling [3]. Conventionally, an NoC uses multi-stage (4 stages in [4]) synchronizers to improve MTBF, but they increase latency and cannot completely eliminate metastability. Recently, [5] proposed a novel NTV flip-flop, which has a lower probability of having metastability. Another recent work [6] proposed to detect the necessary condition of metastability and mitigate it by modulating the RX clock and also requesting retransmission to guarantee data correctness. However, as it detects a necessary condition, not actual metastability, it tends to overly request retransmission, hurting latency, throughput, and energy efficiency. 

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   Hu, Jia-Mian; Yang, Tiannan; Momeni, Kasra; Cheng, Xiaoxing; Chen, Lei; Lei, Shiming; Zhang, Shujun; Trolier-McKinstry, Susan; Gopalan, Venkatraman; Carman, Gregory P.; et al (July 2017, Nano Letters)
5. Voltage-induced modulation in the charge state of Si-vacancy defects in diamond using high voltage nanosecond pulses

   https://doi.org/10.1063/5.0066537  

   Weng, Sizhe; Coleman, Christopher; Aravind, Indu; Wang, Yu; Zhao, Bofan; Cronin, Stephen B. (October 2021, Applied Physics Letters)