Machine-learning and high-throughput studies for high-entropy materials
- Award ID(s):
- 1809640
- NSF-PAR ID:
- 10343650
- Date Published:
- Journal Name:
- Materials Science and Engineering: R: Reports
- Volume:
- 147
- Issue:
- C
- ISSN:
- 0927-796X
- Page Range / eLocation ID:
- 100645
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
A bstract Muon colliders are an exciting possibility for reaching the highest energies possible on the shortest timescale. They potentially combine the greatest strengths of e + e − and pp colliders by bridging the energy versus precision dichotomy. In this paper we study the sensitivity of Higgs properties that can be achieved with a future 3 or 10 TeV muon collider from single Higgs production. The results presented here represent the first comprehensive picture for the precision achievable including backgrounds and using fast detector simulation with Delphes. Additionally, we compare the results of fast detector simulation with available full simulation studies that include the muon collider specific Beam Induced Background, and show the results are largely unchanged. We comment on some of the strengths and weaknesses of a high energy muon collider for Higgs physics alone, and demonstrate the complementarity of such a collider with the LHC and e + e − Higgs factories. Furthermore, we discuss some of the exciting avenues for improving future results from both theoretical and detector R&D that could be undertaken.more » « less
-
The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion implantation by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures. To explore this bottom-up method for color center generation, we rationally create silicon vacancy defects in nanodiamond and investigate them for optical pressure metrology. In addition, we show that this process can generate noble gas defects within diamond from the typically inactive argon pressure medium, which may explain the hysteresis effects observed in other high-pressure experiments and the presence of noble gases in some meteoritic nanodiamonds. Our results illustrate a general method to produce color centers in diamond and may enable the controlled generation of designer defects.more » « less
-
Abstract AlN Schottky barrier diodes with low ideality factor (<1.2), high current density (>5 kA/cm2), and high breakdown voltage (680 V) are reported. The quasi-vertical device structure consisted of a lightly-doped AlN drift layer and a heavily-doped Al0.75Ga0.25N ohmic contact layer grown on AlN substrates. A combination of simulation, current-voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. We show that introducing a compositionally-graded layer reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 104.