Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy
                        
                    - Award ID(s):
- 1904541
- PAR ID:
- 10344225
- Date Published:
- Journal Name:
- Physical Review Materials
- Volume:
- 5
- Issue:
- 12
- ISSN:
- 2475-9953
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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