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Title: An Investigation Into Multi-Track Deposition in Laser Powder-Bed Fusion: Transient Regions Analysis and Scan Length Effects
Laser powder bed fusion (L-PBF) additive manufacturing has been used to fabricate complex-shaped structures, which often consist of fine features. Due to transient process phenomena, there are differences in terms of the melt pool formation and the surface morphology depending upon the feature area and scan parameters. This study investigates the scan length effect on the surface morphology and the presence of transient length and width that may have a significant effect as the layer addition continues. For this purpose, four scan lengths (0.25 mm, 0.5 mm, 1.0 mm, and 2.0 mm) are used to fabricate six tracks with back-and-forth scanning. A full factorial design of experiments is used to form multi-track depositions with three levels of power (125 W, 160 W, and 195 W), two levels of scan speed (550 mm/s and 1000 mm/s), and four levels of hatch spacing (80 μm, 100 μm, 120 μm, and 140 μm). A white light interferometer is used to acquire the surface data, and MATLAB is used for surface topographical analysis. The results indicated that the scan length has a significant effect on the surface characteristics. The average height of multi-track deposits increases with the decrease of the scan length. Moreover, the more » transient length and width can be approximated based on the height variation along both the scan and transverse directions, respectively. « less
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Proceedings of the ASME 2022 17th International Manufacturing Science and Engineering Conference, MSEC2022-85746
Sponsoring Org:
National Science Foundation
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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
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