An official website of the United States government
Abstract Owing to its superlative carrier mobility and atomic thinness, graphene exhibits great promise for interconnects in future nanoelectronic integrated circuits. Chemical vapor deposition (CVD), the most popular method for wafer-scale growth of graphene, produces monolayers that are polycrystalline, where misoriented grains are separated by extended grain boundaries (GBs). Theoretical models of GB resistivity focused on small sections of an extended GB, assuming it to be a straight line, and predicted a strong dependence of resistivity on misorientation angle. In contrast, measurements produced values in a much narrower range and without a pronounced angle dependence. Here we study electron transport across rough GBs, which are composed of short straight segments connected together into an extended GB. We found that, due to the zig-zag nature of rough GBs, there always exist a few segments that divide the crystallographic angle between two grains symmetrically and provide a highly conductive path for the current to flow across the GBs. The presence of highly conductive segments produces resistivity between 10 2 to 10 4 Ω μ m regardless of misorientation angle. An extended GB with large roughness and small correlation length has small resistivity on the order of 10 3 Ω μ m, even for highly mismatched asymmetric GBs. The effective slope of the GB, given by the ratio of roughness and lateral correlation length, is an effective universal quantifier for GB resistivity. Our results demonstrate that the probability of finding conductive segments diminishes in short GBs, which could cause a large variation in the resistivity of narrow ribbons etched from polycrystalline graphene. We also uncover spreading resistance due to the current bending in the grains to flow through the conductive segments of the GB and show that it scales linearly with the grain resistance. Our results will be crucial for designing graphene-based interconnects for future integrated circuits.
more »
« less
Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene
The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths.
more »
« less
- Award ID(s):
- 1931088
- PAR ID:
- 10347639
- Date Published:
- Journal Name:
- Nanomaterials
- Volume:
- 12
- Issue:
- 2
- ISSN:
- 2079-4991
- Page Range / eLocation ID:
- 206
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract This study uses high‐energy X‐ray diffraction microscopy of SrTiO3to identify correlations between grain boundary (GB) area changes and the motion direction of neighboring GBs to investigate interfacial energy minimization mechanisms during grain growth. The local GB area changes were measured near triple lines (TLs) to isolate the effects of neighboring GBs. These area changes were then correlated to the migration direction and curvature of the neighboring GBs present at the TL, providing an alternative metric associated with lateral expansion for describing GB migration. Additionally, this study extracted GB dihedral angles, which reflect the relative GB energy, to test whether low energy GBs replace high energy GBs (i.e., GB replacement mechanism) and, thus, can be used to predict a GB's migration direction. The majority of GBs did not exhibit local area changes reflective of the GB replacement mechanism, and the dihedral angles were not reliable indicators of GB motion. However, the expansion and shrinkage of GBs moving away from their center of curvature was more often consistent with the grain boundary replacement mechanism. These results suggest that growth for certain GB configurations is governed by relative energy differences while others are governed by curvature.more » « less
-
Abstract This study investigates the influence of thermal history on grain boundary (GB) energy and the grain growth behavior of SrTiO3at 1425°C. Two thermal profiles were explored: (1) a single‐step sintering at 1425°C for 1 h and (2) a two‐step profile with sintering completed at 1425°C for 1 h with an additional 10 h at 1350°C. Electron backscattered diffraction and atomic force microscopy were utilized to measure the grain size and GB energy distributions, respectively, for the samples before and after grain growth at 1425°C for 10 h. The two‐step profile exhibits fewer abnormal grains and a slower growth rate at 1425°C than the single‐step profile. Additionally, the two‐step sample comprises few high‐energy GBs and a narrow GB energy distribution, which suggests that it had a lower driving force for subsequent grain growth. The thermal profile was able to sufficiently change the growth rate such that the two‐step sample results in a finer grain size than observed for the single‐step sample after 10 h at 1425°C despite being exposed to elevated temperatures for almost twice as long. These results suggest that GB energy engineering through thermal profile modification can be used to control the grain growth rate and abnormal grain growth likelihood.more » « less
-
Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier recombination velocities at GBs (SGB) of polycrystalline perovskites by mapping the transient photoluminescence pattern change induced by the nonradiative recombination of carriers at GBs. Charge recombination at GBs is revealed to be even stronger than at surfaces of unpassivated films, with averageSGBreaching 2200 to 3300 cm/s. Regular surface treatments do not passivate GBs because of the absence of contact at GBs. We find a surface treatment using tributyl(methyl)phosphonium dimethyl phosphate that can penetrate into GBs by partially dissolving GBs and converting it into one-dimensional perovskites. It reduces the averageSGBby four times, with the lowestSGBof 410 cm/s, which is comparable to surface recombination velocities after passivation.more » « less
-
Abstract The interaction of alloying elements with grain boundaries (GBs) influences many phenomena, such as microstructural evolution and transport. While GB solute segregation has been the subject of active research in recent years, most studies focus on ground-state GB structures, i.e., lowest energy GBs. The impact of GB metastability on solute segregation remains poorly understood. Herein, we leverage atomistic simulations to generate metastable structures for a series of [001] and [110] symmetric tilt GBs in a model Al–Mg system and quantify Mg segregation to individual sites within these boundaries. Our results show large variations in the atomic Voronoi volume due to GB metastability, which are found to influence the segregation energy. The atomistic data are then used to train a Gaussian Process machine learning model, which provides a probabilistic description of the GB segregation energy in terms of the local atomic environment. In broad terms, our approach extends existing GB segregation models by accounting for variability due to GB metastability, where the segregation energy is treated as a distribution rather than a single-valued quantity.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/nano12020206
