Liu, Mingyuan, Qin, Fei, Rothschild, Molly, Zhang, Yuxuan, Lee, Dong Hun, No, Kwangsoo, Song, Han Wook, and Lee, Sunghwan. The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors. Retrieved from https://par.nsf.gov/biblio/10347640. Journal of Electronic Materials 51.4 Web. doi:10.1007/s11664-022-09453-6.

Liu, Mingyuan, Qin, Fei, Rothschild, Molly, Zhang, Yuxuan, Lee, Dong Hun, No, Kwangsoo, Song, Han Wook, & Lee, Sunghwan. The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors. Journal of Electronic Materials, 51 (4). Retrieved from https://par.nsf.gov/biblio/10347640. https://doi.org/10.1007/s11664-022-09453-6

Liu, Mingyuan, Qin, Fei, Rothschild, Molly, Zhang, Yuxuan, Lee, Dong Hun, No, Kwangsoo, Song, Han Wook, and Lee, Sunghwan. "The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors". Journal of Electronic Materials 51 (4). Country unknown/Code not available. https://doi.org/10.1007/s11664-022-09453-6. https://par.nsf.gov/biblio/10347640.

@article{osti_10347640,
place = {Country unknown/Code not available}, title = {The Effect of Bias Stress on the Performance of Amorphous InAlZnO-Based Thin Film Transistors}, url = {https://par.nsf.gov/biblio/10347640}, DOI = {10.1007/s11664-022-09453-6}, abstractNote = {}, journal = {Journal of Electronic Materials}, volume = {51}, number = {4}, author = {Liu, Mingyuan and Qin, Fei and Rothschild, Molly and Zhang, Yuxuan and Lee, Dong Hun and No, Kwangsoo and Song, Han Wook and Lee, Sunghwan}, }