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Title: Laser-controlled projection of quantum dot dipoles using metal-oxide plasmonic metastructures: maintaining spin polarization memory
It is known that the spontaneous emission of semiconductor quantum dots is mostly unpolarized when they are excited off-resonantly. The complete loss of polarization memory is associated with the ultrafast carrier scattering, leading to complete spin polarization relaxation. We study the application of metal-oxide plasmonic double-junction structures to transfer the excitation polarization memory of quantum dots to their spontaneous emission. These structures consist of arrays of metallic nanoantennas in the presence of heterostructures consisting of Au/Si Schottky junctions and Si/Al-oxide charge barriers. Our results show that by using such double-junction structures, one can control the states of polarization and intensity of the emission of quantum dots using the state of polarization of an off-resonant laser field. For achieving this, we explore the optical control of exciton–plasmon coupling using optical lattice modes caused by the arrays of metallic nanoantennas, and the application of the electrostatic field generated by the hot electrons captured at the Au/Si Schottky junction.
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Journal of Materials Chemistry C
Page Range or eLocation-ID:
14269 to 14277
Sponsoring Org:
National Science Foundation
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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. 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