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Title: Sulfurization Engineering of One‐Step Low‐Temperature MoS 2 and WS 2 Thin Films for Memristor Device Applications

2D materials have been of considerable interest as new materials for device applications. Non‐volatile resistive switching applications of MoS2and WS2have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large‐area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one‐step sulfurization method to synthesize MoS2and WS2at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO2/Si substrates is achieved. Following this, MoS2and WS2memristors are fabricated that exhibit stable non‐volatile switching and a satisfactory large on/off current ratio (103–105) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. The demonstration of large‐scale MoS2and WS2memristors with a one‐step low‐temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing.

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Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Electronic Materials
Medium: X
Sponsoring Org:
National Science Foundation
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    This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.


    [1] Younget al.,IEEE Computational Intelligence Magazine,vol. 13, no. 3, pp. 55-75, 2018.

    [2] Hadsellet al.,Journal of Field Robotics,vol. 26, no. 2, pp. 120-144, 2009.

    [3] Najafabadiet al.,Journal of Big Data,vol. 2, no. 1, p. 1, 2015.

    [4] Zhaoet al.,Applied Physics Reviews,vol. 7, no. 1, 2020.

    [5] Zidanet al.,Nature Electronics,vol. 1, no. 1, pp. 22-29, 2018.

    [6] Wulfet al.,SIGARCH Comput. Archit. News,vol. 23, no. 1, pp. 20–24, 1995.

    [7] Wilkes,SIGARCH Comput. Archit. News,vol. 23, no. 4, pp. 4–6, 1995.

    [8] Ielminiet al.,Nature Electronics,vol. 1, no. 6, pp. 333-343, 2018.

    [9] Changet al.,Nano Letters,vol. 10, no. 4, pp. 1297-1301, 2010.

    [10] Qinet al., Physica Status Solidi (RRL) - Rapid Research Letters, pssr.202200075R1, In press, 2022.

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