skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: A graph based approach to model charge transport in semiconducting polymers
Abstract Charge transport in molecular solids, such as semiconducting polymers, is strongly affected by packing and structural order over several length scales. Conventional approaches to modeling these phenomena range from analytical models to numerical models using quantum mechanical calculations. While analytical approaches cannot account for detailed structural effects, numerical models are expensive for exhaustive (and statistically significant) analysis. Here, we report a computationally scalable methodology using graph theory to explore the influence of molecular ordering on charge mobility. This model accurately reproduces the analytical results for transport in nematic and isotropic systems, as well as experimental results of the dependence of the charge carrier mobility on orientation correlation length for polymers. We further model how defect distribution (correlated and uncorrelated) in semiconducting polymers can modify the mobility, predicting a critical defect density above which the mobility plummets. This work enables rapid (and computationally extensible) evaluation of charge mobility semiconducting polymer devices.  more » « less
Award ID(s):
1906194
PAR ID:
10363716
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
npj Computational Materials
Volume:
8
Issue:
1
ISSN:
2057-3960
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. A grand challenge in materials science is to identify the impact of molecular composition and structure across a range of length scales on macroscopic properties. We demonstrate a unified experimental–theoretical framework that coordinates experimental measurements of mesoscale structure with molecular-level physical modeling to bridge multiple scales of physical behavior. Here we apply this framework to understand charge transport in a semiconducting polymer. Spatially-resolved nanodiffraction in a transmission electron microscope is combined with a self-consistent framework of the polymer chain statistics to yield a detailed picture of the polymer microstructure ranging from the molecular to device relevant scale. Using these data as inputs for charge transport calculations, the combined multiscale approach highlights the underrepresented role of defects in existing transport models. Short-range transport is shown to be more chaotic than is often pictured, with the drift velocity accounting for a small portion of overall charge motion. Local transport is sensitive to the alignment and geometry of polymer chains. At longer length scales, large domains and gradual grain boundaries funnel charges preferentially to certain regions, creating inhomogeneous charge distributions. While alignment generally improves mobility, these funneling effects negatively impact mobility. The microstructure is modified in silico to explore possible design rules, showing chain stiffness and alignment to be beneficial while local homogeneity has no positive effect. This combined approach creates a flexible and extensible pipeline for analyzing multiscale functional properties and a general strategy for extending the accesible length scales of experimental and theoretical probes by harnessing their combined strengths. 
    more » « less
  2. Abstract Intra‐ and intermolecular ordering greatly impacts the electronic and optoelectronic properties of semiconducting polymers. The interrelationship between ordering of alkyl sidechains and conjugated backbones has yet to be fully detailed, despite much prior effort. Here, the discovery of a highly ordered alkyl sidechain phase in six representative semiconducting polymers, determined from distinct spectroscopic and diffraction signatures, is reported. The sidechain ordering exhibits unusually large coherence lengths (≥70 nm), induces torsional/twisting backbone disorder, and results in a vertically multilayered nanostructure with ordered sidechain layers alternating with disordered backbone layers. Calorimetry and in situ variable temperature scattering measurements in a model system poly{4‐(5‐(4,8‐bis(3‐butylnonyl)‐6‐methylbenzo[1,2‐b:4,5‐b′]dithiophen‐2‐yl)thiophen‐2‐yl)‐2‐(2‐butyloctyl)‐5,6‐difluoro‐7‐(5‐methylthiophen‐2‐yl)‐2H‐benzo[d][1,2,3]triazole} (PBnDT‐FTAZ) clearly delineate this competition of ordering that prevents simultaneous long‐range order of both moieties. The long‐range sidechain ordering can be exploited as a transient state to fabricate PBnDT‐FTAZ films with an atypical edge‐on texture and 2.5× improved field‐effect transistor mobility. The observed influence of ordering between the moieties implies that improved molecular design can produce synergistic rather than destructive ordering effects. Given the large sidechain coherence lengths observed, such synergistic ordering should greatly improve the coherence length of backbone ordering and thereby improve electronic and optoelectronic properties such as charge transport and exciton diffusion lengths. 
    more » « less
  3. Abstract Donor–acceptor (D–A) type semiconducting polymers have shown great potential for the application of deformable and stretchable electronics in recent decades. However, due to their heterogeneous structure with rigid backbones and long solubilizing side chains, the fundamental understanding of their molecular picture upon mechanical deformation still lacks investigation. Here, the molecular orientation of diketopyrrolopyrrole (DPP)‐based D–A polymer thin films is probed under tensile deformation via both experimental measurements and molecular modeling. The detailed morphological analysis demonstrates highly aligned polymer crystallites upon deformation, while the degree of backbone alignment is limited within the crystalline domain. Besides, the aromatic ring on polymer backbones rotates parallel to the strain direction despite the relatively low overall chain anisotropy. The effect of side‐chain length on the DPP chain alignment is observed to be less noticeable. These observations are distinct from traditional linear‐chain semicrystalline polymers like polyethylene due to distinct characteristics of backbone/side‐chain combination and the crystallographic characteristics in DPP polymers. Furthermore, a stable and isotropic charge carrier mobility is obtained from fabricated organic field‐effect transistors. This study deconvolutes the alignment of different components within the thin‐film microstructure and highlights that crystallite rotation and chain slippage are the primary deformation mechanisms for semiconducting polymers. 
    more » « less
  4. Understanding the relationship between multiscale morphology and electronic structure is a grand challenge for semiconducting soft materials. Computational studies aimed at characterizing these multiscale relationships require the complex integration of quantum-chemical (QC) calculations, all-atom and coarse-grained (CG) molecular dynamics simulations, and back-mapping approaches. However, the integration and scalability of these methods pose substantial computational challenges that limit their application to the requisite length scales of soft material morphologies. Here, we demonstrate the bottom-up electronic coarse-graining (ECG) of morphology-dependent electronic structure in the liquid-crystal-forming semiconductor, 2-(4-methoxyphenyl)-7-octyl-benzothienobenzothiophene (BTBT). ECG is applied to construct density functional theory (DFT)-accurate valence band Hamiltonians of the isotropic and smectic liquid crystal (LC) phases using only the CG representation of BTBT. By bypassing the atomistic resolution and its prohibitive computational costs, ECG enables the first calculations of the morphology dependence of the electronic structure of charge carriers across LC phases at the ~20 nm length scale, with robust statistical sampling. kinetic Monte Carlo (kMC) simulations reveal a strong morphology dependence on zero-field charge mobility among different LC phases as well as the presence of two-molecule charge carriers that act as traps and hinder charge transport. We leverage these results to further evaluate the feasibility of developing truly mesoscopic, field-based ECG models in future works. The fully CG approach to electronic property predictions in LC semiconductors opens a new computational direction for designing electronic processes in soft materials at their characteristic length scales. 
    more » « less
  5. The wide-gap semiconducting perovskite BaSnO3 has attracted attention since the discovery of outstanding mobility at high electron densities, spurred on by potential applications in oxide, transparent, and power electronics. Despite progress, much remains to be understood in terms of mobility-limiting scattering in BaSnO3 thin films and thus mobility optimization. Here, we apply solid-state ion-gel-based electrolyte gating to electrostatically control electron density over a wide range (1018 cm−3 to >1020 cm−3) in BaSnO3 films. Temperature- and gate-voltage-dependent transport data then probe scattering mechanisms and mobility vs electron density alone, independently of sample-to-sample defect density variations. This is done on molecular-beam-epitaxy- and sputter-deposited films as a function of thickness, initial chemical doping, and initial mobility. Remarkably universal behavior occurs, the mobility first increasing with electron density to ∼1020 cm−3 before decreasing slightly. This trend is quantitatively analyzed at cryogenic and room temperatures using analytical models for phonon, ionized impurity, charged dislocation, surface/interface roughness, and electrolyte-induced scattering. The mobility maximum is thus understood to arise from competition between charged impurity/dislocation scattering and electrolyte scattering. The gate-voltage-induced mobility enhancement is found as large as 2000%, realizing 300 K mobility up to 140 cm2 V−1 s−1. This work thus significantly advances the understanding of mobility-limiting scattering processes in BaSnO3, resulting in outstanding room temperature mobilities. 
    more » « less