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We employ deep kernel learning electronic coarse-graining (DKL-ECG) with approximate Gaussian processes as a flexible and scalable framework for learning heteroscedastic electronic property distributions as a smooth function of coarse-grained (CG) configuration. The appropriateness of the Gaussian prior on predictive CG property distributions is justified as a function of CG model resolution by examining the statistics of target distributions. The certainties of predictive CG distributions are shown to be limited by CG model resolution with DKL-ECG predictive noise converging to the intrinsic physical noise induced by the CG mapping operator for multiple chemistries. Further analysis of the resolution dependence of learned CG property distributions allows for the identification of CG mapping operators that capture CG degrees of freedom with strong electron–phonon coupling. We further demonstrate the ability to construct the exact quantum chemical valence electronic density of states (EDOS), including behavior in the tails of the EDOS, from an entirely CG model by combining iterative Boltzmann inversion and DKL-ECG. DKL-ECG provides a means of learning CG distributions of all-atom properties that are traditionally “lost” in CG model development, introducing a promising methodological alternative to backmapping algorithms commonly employed to recover all-atom property distributions from CG simulations.
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Accessing the electronic structure of liquid crystalline semiconductors with bottom-up electronic coarse-graining
Understanding the relationship between multiscale morphology and electronic structure is a grand challenge for semiconducting soft materials. Computational studies aimed at characterizing these multiscale relationships require the complex integration of quantum-chemical (QC) calculations, all-atom and coarse-grained (CG) molecular dynamics simulations, and back-mapping approaches. However, the integration and scalability of these methods pose substantial computational challenges that limit their application to the requisite length scales of soft material morphologies. Here, we demonstrate the bottom-up electronic coarse-graining (ECG) of morphology-dependent electronic structure in the liquid-crystal-forming semiconductor, 2-(4-methoxyphenyl)-7-octyl-benzothienobenzothiophene (BTBT). ECG is applied to construct density functional theory (DFT)-accurate valence band Hamiltonians of the isotropic and smectic liquid crystal (LC) phases using only the CG representation of BTBT. By bypassing the atomistic resolution and its prohibitive computational costs, ECG enables the first calculations of the morphology dependence of the electronic structure of charge carriers across LC phases at the ~20 nm length scale, with robust statistical sampling. kinetic Monte Carlo (kMC) simulations reveal a strong morphology dependence on zero-field charge mobility among different LC phases as well as the presence of two-molecule charge carriers that act as traps and hinder charge transport. We leverage these results to further evaluate the feasibility of developing truly mesoscopic, field-based ECG models in future works. The fully CG approach to electronic property predictions in LC semiconductors opens a new computational direction for designing electronic processes in soft materials at their characteristic length scales.
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- Award ID(s):
- 2154916
- PAR ID:
- 10574844
- Publisher / Repository:
- Royal Society of Chemistry (RSC)
- Date Published:
- Journal Name:
- Chemical Science
- Volume:
- 15
- Issue:
- 22
- ISSN:
- 2041-6520
- Page Range / eLocation ID:
- 8390 to 8403
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1039/D3SC06749A
