Ye, Fan, Kiani, Fatemeh, Huang, Yi, and Xia, Qiangfei. Diffusive Memristors with Uniform and Tunable Relaxation Time for Spike Generation in Event‐Based Pattern Recognition. Advanced Materials . Web. doi:10.1002/adma.202204778.

Ye, Fan, Kiani, Fatemeh, Huang, Yi, & Xia, Qiangfei. Diffusive Memristors with Uniform and Tunable Relaxation Time for Spike Generation in Event‐Based Pattern Recognition. Advanced Materials, (). https://doi.org/10.1002/adma.202204778

Ye, Fan, Kiani, Fatemeh, Huang, Yi, and Xia, Qiangfei. "Diffusive Memristors with Uniform and Tunable Relaxation Time for Spike Generation in Event‐Based Pattern Recognition". Advanced Materials (). Country unknown/Code not available: Wiley Blackwell (John Wiley & Sons). https://doi.org/10.1002/adma.202204778. https://par.nsf.gov/biblio/10373233.

@article{osti_10373233,
place = {Country unknown/Code not available}, title = {Diffusive Memristors with Uniform and Tunable Relaxation Time for Spike Generation in Event‐Based Pattern Recognition}, url = {https://par.nsf.gov/biblio/10373233}, DOI = {10.1002/adma.202204778}, abstractNote = {Not Available}, journal = {Advanced Materials}, publisher = {Wiley Blackwell (John Wiley & Sons)}, author = {Ye, Fan and Kiani, Fatemeh and Huang, Yi and Xia, Qiangfei}, }