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1. Ground-state phase diagram of the t-t ′ -J model

   https://doi.org/10.1073/pnas.2109978118  

   Jiang, Shengtao ; Scalapino, Douglas J. ; White, Steven R. ( October 2021 , Proceedings of the National Academy of Sciences)

   We report results of large-scale ground-state density matrix renormalization group (DMRG) calculations on t-$t^{\prime }$-J cylinders with circumferences 6 and 8. We determine a rough phase diagram that appears to approximate the two-dimensional (2D) system. While for many properties, positive and negative$t^{\prime }$values ($t^{\prime }/t=\pm 0.2$) appear to correspond to electron- and hole-doped cuprate systems, respectively, the behavior of superconductivity itself shows an inconsistency between the model and the materials. The$t^{\prime }<0$(hole-doped) region shows antiferromagnetism limited to very low doping, stripes more generally, and the familiar Fermi surface of the hole-doped cuprates. However, we find$t^{\prime }<0$strongly suppresses superconductivity. The$t^{\prime }>0$(electron-doped) region shows the expected circular Fermi pocket of holes around the$\left(\pi ,\pi \right)$point and a broad low-doped region of coexisting antiferromagnetism and d-wave pairing with a triplet p component at wavevector$\left(\pi ,\pi \right)$induced by the antiferromagnetism and d-wave pairing. The pairing for the electron low-doped system with$t^{\prime }>0$is strong and unambiguous in the DMRG simulations. At larger doping another broad region with stripes in addition to weaker d-wave pairing and striped p-wave pairing appears. In a small doping region near$x=0.08$for$t^{\prime }\sim -0.2$, we find an unconventional type of stripe involving unpaired holes located predominantly on chains spaced three lattice spacings apart. The undoped two-leg ladder regions in between mimic the short-ranged spin correlations seen in two-leg Heisenberg ladders.

    

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2. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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3. Structure and magnetic characterization of some bicompartmental [N 6 O 2 ] divalent metal( ii ) complexes using bis(phenolato) ligands bearing two pendant bis(pyridyl) amine arms

   https://doi.org/10.1039/d3nj02380j  

   Mautner, Franz A. ; Fischer, Roland C. ; Torvisco, Ana ; Nakashima, Kai ; Handa, Makoto ; Mikuriya, Masahiro ; Salem, Nahed M. ; Overby, Gabriel J. ; Maier, Madison R. ; Louka, Febee R. ; et al ( August 2023 , New Journal of Chemistry)

   Reactions of the bicompartmental bis(phenolato) compound 6,6′-methylenebis(2-((bis(pyridin-2-ylmethyl)amino)methyl)-4-chlorophenol)hemihydrate (H 2 L ½H 2 O) with 3d metal( ii ) ions afforded novel fully structurally characterized bridged acetato dinuclear complexes [Mn 2 (HL)(μ 1,2 -OAc) 2 ]PF 6 (1) [Zn 2 (HL)(μ 1,2 -OAc)(H 2 O) 0.75 (MeOH) 0.25 ](PF 6 ) 2 ·0.45(H 2 O) (5) and [Cd 2 (HL)(μ 1,1,2 -OAc)(OAc)(H 2 O)]PF 6 ·H 2 O (6) as well as the polymeric bridged-azido tetranuclear catena -[Cu 4 (HL) 2 (μ 1,1 -N 3 ) 2 (μ 1,3 -N 3 ) 2 ](NO 3 ) 2 ·5H 2 O (4). The complex [Cu 4 (HL) 2 (ClO 4 ) 3 (H 2 O) 5 ](ClO 4 ) 3 ·5H 2 O (2) was partially characterized. In addition, three more dinuclear complexes [Cu 2 (H 2 L)(NO 3 ) 2 (H 2 O) 2 ](NO 3 ) 2 (3), [Cu 2 (HL)(OAc)(CH 3 OH)](PF 6 ) 2 (7) and [Cu 2 (HL)(NCS) 2 ]NO 3 ·2H 2 O (8) were also isolated. All complexes were characterized by CHN elemental analysis, IR and UV-Vis spectroscopy, ESI-MS, conductivity measurements and X-ray single crystal crystallography for compounds 1, 4, 5 and 6, where the bis(phenolato) ligand displayed different deprotonation (H 2 L, HL − and L 2− ). The magnetic susceptibility measurements over the temperature range 2–300 K revealed very weak antiferromagnetic coupling in dimanganese( ii ) 1 ( J = −1.64(1) cm −1 ) and almost negligible magnetic interaction in dicopper( ii ) 2 ( J = 0(3) cm −1 ). In the azido catena -[Cu 4 (HL) 2 (μ 1,1 -N 3 ) 2 (μ 1,3 -N 3 ) 2 ](NO 3 ) 2 ·5H 2 O (4) complex, the J value of −133(3) cm −1 was obtained upon moderate-to-strong antiferromagnetic coupling through the di-μ 1,3 -N 3 -bridged dicopper( ii ) unit with no magnetic interaction between the two copper( ii ) ions in the di-μ 1,1 -N 3 -bridged unit. 

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4. Raman and Electrical Transport Properties of Few-Layered Arsenic-Doped Black Phosphorus

   https://doi.org/10.1039/C9NR04598H  

   Pradhan, Nihar Ranjan ; Garcia, Carlos ; Lucking, Michael ; Pakhira, Sriamanta ; Martinez, Juan ; Rosenmann, Daniel ; Divan, Ralu ; Sumant, Anirudha ; Terrones, H. ; Mendoza-Cortes, Jose L. ; et al ( January 2019 , Nanoscale)

   Black phosphorus (b-P) is an allotrope of phosphorus whose properties have attracted great attention. In contrast to other 2D compounds, or pristine b-P, the properties of b-P alloys have yet to be explored. In this report, we present a detailed study on the Raman spectra and on the temperature dependence of the electrical transport properties of As-doped black phosphorus (b-AsP) for an As fraction x = 0.25. The observed complex Raman spectra were interpreted with the support of Density Functional Theory (DFT) calculations since each original mode splits in three due to P-P, P-As, and As-As bonds. Field-effect transistors (FET) fabricated from few-layered b-AsP exfoliated onto Si/SiO 2 substrates exhibit hole-doped like conduction with a room temperature ON/OFF current ratio of ~10 3 and an intrinsic field-effect mobility approaching ~300 cm 2 /Vs at 300 K which increases up to 600 cm 2 /Vs at 100 K when measured via a 4-terminal method. Remarkably, these values are comparable to, or higher, than those initially reported for pristine b-P, indicating that this level of As doping is not detrimental to its transport properties. The ON to OFF current ratio is observed to increase up to 10 5 at 4 K. At high gate voltages b-AsP displays metallic behavior with the resistivity decreasing with decreasing temperature and saturating below T ∼ 100 K, indicating a gate-induced insulator to metal transition. Similarly to pristine b-P, its transport properties reveal a high anisotropy between armchair (AC) and zig-zag (ZZ) directions. Electronic band structure computed through periodic dispersion-corrected hybrid Density Functional Theory (DFT) indicate close proximity between the Fermi level and the top of the valence band(s) thus explaining its hole doped character. Our study shows that b-AsP has potential for optoelectronics applications that benefit from its anisotropic character and the ability to tune its band gap as a function of the number of layers and As content. 

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5. Novel nitride quantum structures for infrared sensing

   https://doi.org/10.1117/12.2608173  

   Malis, Oana ; Nguyen, Trang ; Cao, Yang ; Magill, Brenden A. ; Dzuba, Brandon ; McGill, Stephen ; Garcia, Carlos ; Khodaparast, Giti A. ; Manfra, Michael J. ( March 2022 , Proc. SPIE 12009, Quantum Sensing and Nano Electronics and Photonics XVIII)

   Razeghi, Manijeh ; Khodaparast, Giti A. ; Vitiello, Miriam S. (Ed.)

   Band structure, strain, and polarization engineering of nitride heterostructures open unparalleled opportunities for quantum sensing in the infrared. Intersubband absorption and photoluminescence are employed to correlate structure with optical properties of nonpolar strain-balanced InGaN/AlGaN nanostructures grown by molecular-beam epitaxy. Mid-infrared intersubband transitions in m-plane (In)AlxGa1-xN/In0.16Ga0.84N (0.19x0.3) multi-quantum wells were observed for the first time in the range of 3.4-5.1 μm (244-360 meV). Direct and attenuated total-reflection infrared absorption measurements are interpreted using structural information revealed by high-resolution x-ray diffraction and transmission electron microanalysis. The experimental intersubband energies are better reproduced by calculations using the local-density approximation than the Hartree-Fock approximation for the exchange-correlation correction. The effect of charge density, quantum well width, and barrier alloy composition on the intersubband transition energy was examined to evaluate the potential of this material for practical infrared applications. Temperature-dependent continuous-wave and time-resolved photoluminescence (TRPL) measurements are also investigated to probe carrier localization and recombination in m-plane InGaN/AlGaN quantum wells. Average localization depths of 21 meV and 40 meV were estimated for the undoped and doped structures, respectively. Using TRPL, dual localization centers were identified in undoped structures, while a single type of localization centers was found in doped structures. At 2 K, a fast decay time of approximately 0.3ns was measured for both undoped and doped structures, while a longer decay time of 2.2 ns was found only for the undoped sample. TRPL in magnetic field was explored to examine the effect of doping sheets on carrier dynamics. 

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