Ferroelectric (FE) devices are conventionally switched by an application of an electric field. However, the recent discoveries of light–matter interactions in heterostructures based on 2D semiconductors and FE materials open new opportunities for using light as an additional tool for device programming. Recently, a purely optical switching of FE polarization in heterostructures comprising 2D MoS2and FE oxide perovskites, such as BaTiO3and Pb(Zr,Ti)O3(PZT), was demonstrated. In this work, it is investigated whether this optical switching has a practical value and can be used to improve functional characteristics of MoS2‐PZT FE field‐effect transistors for nonvolatile memory applications. It is demonstrated that the combined use of an electrical field and visible light improves the nonvolatile ON/OFF ratios in MoS2‐PZT memories by several orders of magnitude compared to their purely electrical operation. The memories are read at zero gate voltage (
Pivotal to functional van der Waals stacked flexible electronic/excitonic/spintronic/thermoelectric chips is the synergy amongst constituent layers. However; the current techniques viz. sequential chemical vapor deposition, micromechanical/wet‐chemical transfer are mostly limited due to diffused interfaces, and metallic remnants/bubbles at the interface. Inter‐layer‐coupled 2+
- NSF-PAR ID:
- 10380283
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Science
- Volume:
- 9
- Issue:
- 32
- ISSN:
- 2198-3844
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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