Detailed electrical and photoemission studies were carried out to probe the chemical nature of the insulating ground state of VO2, whose properties have been an issue for accurate prediction by common theoretical probes. The effects of a systematic modulation of oxygen over-stoichiometry of VO2from 1.86 to 2.44 on the band structure and insulator–metal transitions are presented for the first time. Results offer a different perspective on the temperature- and doping-induced IMT process. They suggest that charge fluctuation in the metallic phase of intrinsic VO2results in the formation of e−and h+pairs that lead to delocalized polaronic V3+and V5+cation states. The metal-to-insulator transition is linked to the cooperative effects of changes in the V–O bond length, localization of V3+electrons at V5+sites, which results in the formation of V4+–V4+dimers, and removal of
Surface plasmons, which allow tight confinement of light, suffer from high intrinsic electronic losses. It has been shown that stimulated emission from excited electrons can transfer energy to plasmons and compensate for the high intrinsic losses. To-date, these realizations have relied on introducing an external gain media coupled to the surface plasmon. Here, we propose that plasmons in two-dimensional materials with closely located electron and hole Fermi pockets can be amplified, when an electrical current bias is applied along the displaced electron-hole pockets, without the need for an external gain media. As a prototypical example, we consider WTe2from the family of 1T
- Award ID(s):
- 1741660
- Publication Date:
- NSF-PAR ID:
- 10385037
- Journal Name:
- Nature Communications
- Volume:
- 13
- Issue:
- 1
- ISSN:
- 2041-1723
- Publisher:
- Nature Publishing Group
- Sponsoring Org:
- National Science Foundation
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