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1. Anisotropic positive linear and sub-linear magnetoresistivity in the cubic type-II Dirac metal Pd3In7

   https://doi.org/10.1038/s41535-023-00601-7  

   Flessa Savvidou, Aikaterini; Ptok, Andrzej; Sharma, G.; Casas, Brian; Clark, Judith K.; Li, Victoria M.; Shatruk, Michael; Tewari, Sumanta; Balicas, Luis (November 2023, npj Quantum Materials)

   Abstract We report a transport study on Pd₃In₇which displays multiple Dirac type-II nodes in its electronic dispersion. Pd₃In₇is characterized by low residual resistivities and high mobilities, which are consistent with Dirac-like quasiparticles. For an applied magnetic field (μ₀H) having a non-zero component along the electrical current, we find a large, positive, and linear inμ₀Hlongitudinal magnetoresistivity (LMR). The sign of the LMR and its linear dependence deviate from the behavior reported for the chiral-anomaly-driven LMR in Weyl semimetals. Interestingly, such anomalous LMR is consistent with predictions for the role of the anomaly in type-II Weyl semimetals. In contrast, the transverse or conventional magnetoresistivity (CMR for electric fieldsE⊥μ₀H) is large and positive, increasing by 10³−10⁴% as a function ofμ₀Hwhile following an anomalous, angle-dependent power law$${\rho }_{{{{\rm{xx}}}}}\propto {({\mu }_{0}H)}^{n}$$ ${\rho }_{\mathrm{xx}}\propto {\left({\mu }_{0}H\right)}^n$withn(θ) ≤ 1. The order of magnitude of the CMR, and its anomalous power-law, is explained in terms of uncompensated electron and hole-like Fermi surfaces characterized by anisotropic carrier scattering likely due to the lack of Lorentz invariance. 

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2. Characterization of SABRE crystal NaI-33 with direct underground counting

   https://doi.org/10.1140/epjc/s10052-021-09098-5  

   Antonello, M.; Arnquist, I. J.; Barberio, E.; Baroncelli, T.; Benziger, J.; Bignell, L. J.; Bolognino, I.; Calaprice, F.; Copello, S.; Dafinei, I.; et al (April 2021, The European Physical Journal C)

   Abstract Ultra-pure NaI(Tl) crystals are the key element for a model-independent verification of the long standing DAMA result and a powerful means to search for the annual modulation signature of dark matter interactions. The SABRE collaboration has been developing cutting-edge techniques for the reduction of intrinsic backgrounds over several years. In this paper we report the first characterization of a 3.4 kg crystal, named NaI-33, performed in an underground passive shielding setup at LNGS. NaI-33 has a record low$$^{39}$$ ${}^{39}$K contamination of 4.3 ± 0.2 ppb as determined by mass spectrometry. We measured a light yield of 11.1 ± 0.2 photoelectrons/keV and an energy resolution of 13.2% (FWHM/E) at 59.5 keV. We evaluated the activities of$$^{226}$$ ${}^{226}$Ra and$$^{228}$$ ${}^{228}$Th inside the crystal to be$$5.9\pm 0.6~\upmu $$ $5.9\pm 0.6\mu$Bq/kg and$$1.6\pm 0.3~\upmu $$ $1.6\pm 0.3\mu$Bq/kg, respectively, which would indicate a contamination from$$^{238}$$ ${}^{238}$U and$$^{232}$$ ${}^{232}$Th at part-per-trillion level. We measured an activity of 0.51 ± 0.02 mBq/kg due to$$^{210}$$ ${}^{210}$Pb out of equilibrium and a$$\alpha $$ $\alpha$quenching factor of 0.63 ± 0.01 at 5304 keV. We illustrate the analyses techniques developed to reject electronic noise in the lower part of the energy spectrum. A cut-based strategy and a multivariate approach indicated a rate, attributed to the intrinsic radioactivity of the crystal, of$$\sim $$ $\sim$1 count/day/kg/keV in the [5–20] keV region. 

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3. Plasmons in the Kagome metal CsV3Sb5

   https://doi.org/10.1038/s41467-024-49723-x  

   Shiravi, H; Gupta, A; Ortiz, B R; Cui, S; Yu, B; Uykur, E; Tsirlin, A A; Wilson, S D; Sun, Z; Ni, G X (December 2024, Nature Communications)

   Abstract Plasmon polaritons, or plasmons, are coupled oscillations of electrons and electromagnetic fields that can confine the latter into deeply subwavelength scales, enabling novel polaritonic devices. While plasmons have been extensively studied in normal metals or semimetals, they remain largely unexplored in correlated materials. In this paper, we report infrared (IR) nano-imaging of thin flakes of CsV₃Sb₅, a prototypical layered Kagome metal. We observe propagating plasmon waves in real-space with wavelengths tunable by the flake thickness. From their frequency-momentum dispersion, we infer the out-of-plane dielectric function$${{{{{{\boldsymbol{\epsilon }}}}}}}_{{{{{{\boldsymbol{c}}}}}}}$$ ${ϵ}_c$that is generally difficult to obtain in conventional far-field optics, and elucidate signatures of electronic correlations when compared to density functional theory (DFT). We propose correlation effects might have switched the real part of$${{{{{{\boldsymbol{\epsilon }}}}}}}_{{{{{{\boldsymbol{c}}}}}}}$$ ${ϵ}_c$from negative to positive values over a wide range of middle-IR frequencies, transforming the surface plasmons into hyperbolic bulk plasmons, and have dramatically suppressed their dissipation. 

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4. Generative design of stable semiconductor materials using deep learning and density functional theory

   https://doi.org/10.1038/s41524-022-00850-3  

   Siriwardane, Edirisuriya M. Dilanga; Zhao, Yong; Perera, Indika; Hu, Jianjun (August 2022, npj Computational Materials)

   Abstract Semiconductor device technology has greatly developed in complexity since discovering the bipolar transistor. In this work, we developed a computational pipeline to discover stable semiconductors by combining generative adversarial networks (GAN), classifiers, and high-throughput first-principles calculations. We used CubicGAN, a GAN-based algorithm for generating cubic materials and developed a classifier to screen the semiconductors and studied their stability using first principles. We found 12 stable AA$${}^{\prime}$$ ${}^{\prime }$MH₆semiconductors in the F-43m space group including BaNaRhH₆, BaSrZnH₆, BaCsAlH₆, SrTlIrH₆, KNaNiH₆, NaYRuH₆, CsKSiH₆, CaScMnH₆, YZnMnH₆, NaZrMnH₆, AgZrMnH₆, and ScZnMnH₆. Previous research reported that five AA$${}^{\prime}$$ ${}^{\prime }$IrH6 semiconductors with the same space group were synthesized. Our research shows that AA$${}^{\prime}$$ ${}^{\prime }$MnH₆and NaYRuH₆semiconductors have considerably different properties compared to the rest of the AA$${}^{\prime}$$ ${}^{\prime }$MH₆semiconductors. Based on the accurate hybrid functional calculations, AA$${}^{\prime}$$ ${}^{\prime }$MH₆semiconductors are found to be wide-bandgap semiconductors. Moreover, BaSrZnH₆and KNaNiH₆are direct-bandgap semiconductors, whereas others exhibit indirect bandgaps. 

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5. Electron-impact excitation of the 5$$\varvec{^2\textbf{S}_{1/2} \rightarrow 5^2\textbf{P}_{1/2}}$$ and 5$$\varvec{^2\textbf{P}_{3/2}}$$ transitions in rubidium by 40 eV electrons: theory and experiment

   https://doi.org/10.1140/epjd/s10053-022-00413-7  

   Hamilton, K. R.; Zatsarinny, O.; Bartschat, K.; Predojević, B.; Šević, D.; Marinković, B. P.; Brunger, M. J. (May 2022, The European Physical Journal D)

   AbstractWe report on a series of detailed Breit-Pauli and Dirac B-spline R-matrix (DBSR) differential cross section (DCS) calculations for excitation of the$$5\,^2\textrm{S}_{1/2} \rightarrow 5\,^2\textrm{P}_{1/2}$$ $5{}^2{\text{S}}_{1/2}\to 5{}^2{\text{P}}_{1/2}$and$$5\,^2\textrm{S}_{1/2}\rightarrow 5\,^2\textrm{P}_{3/2}$$ $5{}^2{\text{S}}_{1/2}\to 5{}^2{\text{P}}_{3/2}$states in rubidium by 40 eV incident electrons. The early BP computations shown here were carried out with both 5 states and 12 states, while the DBSR models coupled 150 and 325 states, respectively. We also report corresponding results from a limited set of DCS measurements on the unresolved$$5\,^2\textrm{P}_{1/2,3/2}$$ $5{}^2{\text{P}}_{1/2,3/2}$states, with the experimental data being restricted to the scattered electron angular range 2–$$10^\circ $$ ${10}^{\circ }$. Typically, good agreement is found between our calculated and measured DCS for excitation of the unresolved$$5\,^2\textrm{P}_{1/2,3/2}$$ $5{}^2{\text{P}}_{1/2,3/2}$states, with best accord being found between the DBSR predictions and the measured data. The present theoretical and experimental results are also compared with predictions from earlier 40 eV calculations using the nonrelativistic Distorted-Wave Born Approximation and a Relativistic Distorted-Wave model. Graphic abstract 

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