59.9 mV∙dec -1 Subthreshold Swing Achieved in Zinc Tin Oxide TFTs with in situ Atomic Layer Deposited Al 2 O 3 Gate Insulator
- Award ID(s):
- 1727918
- NSF-PAR ID:
- 10387930
- Date Published:
- Journal Name:
- IEEE Electron Device Letters
- ISSN:
- 0741-3106
- Page Range / eLocation ID:
- 1 to 1
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation