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Title: 59.9 mV∙dec -1 Subthreshold Swing Achieved in Zinc Tin Oxide TFTs with in situ Atomic Layer Deposited Al 2 O 3 Gate Insulator
Award ID(s):
1727918
NSF-PAR ID:
10387930
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
IEEE Electron Device Letters
ISSN:
0741-3106
Page Range / eLocation ID:
1 to 1
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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