This content will become publicly available on December 7, 2023
To address this challenge, an AlGaN/GaN HEMT employing a transparent gate made of indium tin oxide (ITO) was fabricated, which enables full channel temperature mapping using Raman spectroscopy. It was found that the maximum channel temperature rise under a partially pinched-off condition is more than ∼93% higher than that for an open more »
- Award ID(s):
- 1934482
- Publication Date:
- NSF-PAR ID:
- 10390516
- Journal Name:
- ASME 2022 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
- Page Range or eLocation-ID:
- 1 - 8
- Sponsoring Org:
- National Science Foundation
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