An electrical‐biased or mechanical‐loaded scanning probe written on the ferroelectric surface can generate programmable domain nanopatterns for ultra‐scaled and reconfigurable nanoscale electronics. Fabricating ferroelectric domain patterns by direct‐writing as quickly as possible is highly desirable for high response rate devices. Using monolayer
Utilizing the unique in‐plane/out‐of‐plane polarization coupling in ferroelectric van der Waals α‐In2Se3, ferroelectric‐polarization‐controlled electrical conductance modulation in two‐dimensional (2D) MoS2with a large dynamic range of over 5 orders of magnitude and excellent non‐volatility is demonstrated. This highly efficient control of the electrical conductance is facilitated by enhanced capacitive coupling through atomic‐layer‐deposition‐grown Al2O3as the dielectric medium. By varying the in‐plane poling bias to the ferroelectric α‐In2Se3, the electrical conductance of vertically stacked 2D MoS2can be tuned continuously. This approach enables simplified device design and provides great flexibility in device integrations, and it can be applied in principle to manipulate the electronic states in any 2D semiconductors for various applications such as transistors, tunneling devices, and reconfigurable electronics. The results also provide insight into the ferroelectric polarization screening by ambient chemical species, highlighting the need for surface passivation, and/or device encapsulations.
more » « less- Award ID(s):
- 1930769
- NSF-PAR ID:
- 10474226
- Publisher / Repository:
- Wiley
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 8
- Issue:
- 9
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1002/aelm.202200413
