More Like this

1. Polyfluorinated Electrolyte for Fully Printed Carbon Nanotube Electronics

   https://doi.org/10.1002/adfm.201601605  

   Li, Huaping ; Tang, Yifan ; Guo, Wenmin ; Liu, Hongyu ; Zhou, Lili ; Smolinski, Nina ( August 2016 , Advanced Functional Materials)

   Flexible electronics with highly thermal stability and mechanical strength are highly needed in advanced transportation systems. Semiconducting single‐walled carbon nanotubes are one of the leading active materials for such thin film transistors because they are printable, flexible, thermally stable, and mechanically strong. Dielectrics with large capacitance are another major component, and polymer electrolytes are printed for flexible electronics, but they suffer from poor mechanical strength and low operating temperature. Here, a transparent, mechanically flexible, and thermally stable polyfluorinated electrolyte (PFE) is developed with high capacitance by curing printed polyfluorinated resin (PFR) and ionic liquid composite at high temperature. PFE inherits the mechanical flexibility and thermal stability from PFR. The immobilized ionic liquid inside the porous structures of PFE accounts for the high capacitance. With top‐gated PFE, fully printed electronically pure single‐chirality (6,5) single‐walled carbon nanotube (SWCNT) thin‐film transistors (TFTs) exhibit air stable, consistent, and reliable ambipolar characteristics with high transconductance (1 mS) and small subthreshold swing (<0.15 V dec⁻¹) at low voltage in ambient air for p‐type and n‐type carriers, and >10⁵ON/OFF current ratio for both carriers under low operation voltage.

    

   more » « less
2. Aligned 2D carbon nanotube liquid crystals for wafer-scale electronics

   https://doi.org/10.1126/sciadv.abh0640  

   Jinkins, Katherine R. ; Foradori, Sean M. ; Saraswat, Vivek ; Jacobberger, Robert M. ; Dwyer, Jonathan H. ; Gopalan, Padma ; Berson, Arganthaël ; Arnold, Michael S. ( September 2021 , Science Advances)

   Semiconducting carbon nanotubes promise faster performance and lower power consumption than Si in field-effect transistors (FETs) if they can be aligned in dense arrays. Here, we demonstrate that nanotubes collected at a liquid/liquid interface self-organize to form two-dimensional (2D) nematic liquid crystals that globally align with flow. The 2D liquid crystals are transferred onto substrates in a continuous process generating dense arrays of nanotubes aligned within ±6°, ideal for electronics. Nanotube ordering improves with increasing concentration and decreasing temperature due to the underlying liquid crystal phenomena. The excellent alignment and uniformity of the transferred assemblies enable FETs with exceptional on-state current density averaging 520 μA μm −1 at only −0.6 V, and variation of only 19%. FETs with ion gel top gates demonstrate subthreshold swing as low as 60 mV decade −1 . Deposition across a 10-cm substrate is achieved, evidencing the promise of 2D nanotube liquid crystals for commercial semiconductor electronics. 

   more » « less
3. Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices

   https://doi.org/10.3390/mi12010012  

   Kimbrough, Joevonte ; Williams, Lauren ; Yuan, Qunying ; Xiao, Zhigang ( January 2021 , Micromachines)

   In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs was functional, and that among the functional CNTFETs, 30% of the CNTFETs had an IDS on/off ratio larger than 20 while 70% of the CNTFETs had an IDS on/off ratio lower than 20. The highest IDS on/off ratio was about 490. The DEP-based positioning of carbon nanotubes is simple and effective, and the DEP-based device fabrication steps are compatible with Si technology processes and could lead to the wafer-scale fabrication of CNT electronic devices. 

   more » « less
4. Substrate‐Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors

   https://doi.org/10.1002/aelm.201800593  

   Jinkins, Katherine R. ; Chan, Jason ; Jacobberger, Robert M. ; Berson, Arganthaël ; Arnold, Michael S. ( November 2018 , Advanced Electronic Materials)

   To exploit their charge transport properties in transistors, semiconducting carbon nanotubes must be assembled into aligned arrays comprised of individualized nanotubes at optimal packing densities. However, achieving this control on the wafer‐scale is challenging. Here, solution‐based shear in substrate‐wide, confined channels is investigated to deposit continuous films of well‐aligned, individualized, semiconducting nanotubes. Polymer‐wrapped nanotubes in organic ink are forced through sub‐mm tall channels, generating shear up to 10 000 s⁻¹uniformly aligning nanotubes across substrates. The ink volume and concentration, channel height, and shear rate dependencies are elucidated. Optimized conditions enable alignment within a ±32° window, at 50 nanotubes µm⁻¹, on 10 × 10 cm²substrates. Transistors (channel length of 1–5 µm) are fabricated parallel and perpendicular to the alignment. The parallel transistors perform with 7× faster charge carrier mobility (101 and 49 cm²V⁻¹s⁻¹assuming array and parallel‐plate capacitances, respectively) with high on/off ratio of 10⁵. The spatial uniformity varies ±10% in density, ±2° in alignment, and ±7% in mobility. Deposition occurs within seconds per wafer, and further substrate scaling is viable. Compared to random networks, aligned nanotube films promise to be a superior platform for applications including sensors, flexible/stretchable electronics, and light emitting and harvesting devices.

    

   more » « less
5. Nozzle‐Free Printing of CNT Electronics Using Laser‐Generated Focused Ultrasound

   https://doi.org/10.1002/smtd.202301596  

   Seva, Sarah ; Rorem, Benjamin ; Chinnathambi, Karthik ; Estrada, David ; Guo, L. Jay ; Subbaraman, Harish ( March 2024 , Small Methods)

   Printed electronics have made remarkable progress in recent years and inkjet printing (IJP) has emerged as one of the leading methods for fabricating printed electronic devices. However, challenges such as nozzle clogging, and strict ink formulation constraints have limited their widespread use. To address this issue, a novel nozzle‐free printing technology is explored, which is enabled by laser‐generated focused ultrasound, as a potential alternative printing modality called Shock‐wave Jet Printing (SJP). Specifically, the performance of SJP‐printed and IJP‐printed bottom‐gated carbon nanotube (CNT) thin film transistors (TFTs) is compared. While IJP required ten print passes to achieve fully functional devices with channel dimensions ranging from tens to hundreds of micrometers, SJP achieved comparable performance with just a single pass. For optimized devices, SJP demonstrated six times higher maximum mobility than IJP‐printed devices. Furthermore, the advantages of nozzle‐free printing are evident, as SJP successfully printed stored and unsonicated inks, delivering moderate electrical performance, whereas IJP suffered from nozzle clogging due to CNT agglomeration. Moreover, SJP can print significantly longer CNTs, spanning the entire range of tube lengths of commercially available CNT ink. The findings from this study contribute to the advancement of nanomaterial printing, ink formulation, and the development of cost‐effective printable electronics.

    

   more » « less