More Like this

1. High-mobility two-dimensional electron gases at AlGaN/GaN heterostructures grown on GaN bulk wafers and GaN template substrates

   https://doi.org/10.7567/1882-0786/ab512c  

   Cho, YongJin ; Ren, Yuxing ; Xing, Huili Grace ; Jena, Debdeep ( December 2019 , Applied Physics Express)
2. Systematic study of shockley-read-hall and radiative recombination in GaN on Al 2 O 3 , freestanding GaN, and GaN on Si

   https://doi.org/10.1088/2515-7647/ab9072  

   Meyer, J. ; Liu, R. ; Schaller, R. D. ; Lee, H-P ; Bayram, C. ( June 2020 , Journal of Physics: Photonics)
3. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

   https://doi.org/10.1002/adma.201702557  

   Tanaka, Atsunori ; Choi, Woojin ; Chen, Renjie ; Dayeh, Shadi A. ( October 2017 , Advanced Materials)
4. Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (V F Q) −1 Co-Optimization

   https://doi.org/10.1109/ISPSD57135.2023.10147511  

   Yee, Nathan ; Lu, Albert ; Wang, Yifan ; Porter, Matthew ; Zhang, Yuhao ; Wong, Hiu Yung ( May 2023 , 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD))

   GaN-on-GaN vertical diode is a promising device for next-generation power electronics. Its breakdown voltage (BV) is limited by edge termination designs such as guard rings. The design space of guard rings is huge and it is difficult to optimize manually. In this paper, we propose an effective inverse design strategy to co-optimize BV and (V F Q) −1 , where BV, V F , and Q are the breakdown voltage, forward voltage, and reserve capacitive charge of the diode, respectively. Using rapid Technology Computer-Aided-Design (TCAD) simulations, neural network (NN), and Pareto front generation, a GaN-on-GaN diode is optimized within 24 hours. We can obtain structures with 200V higher BV at medium (V F Q) −1 or find a nearly ideal BV structure with 25% higher BV 2 /R on compared to the best randomly generated TCAD data. 

   more » « less
5. Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates

   https://doi.org/10.1063/1.5049393  

   Tanaka, Atsunori ; Choi, Woojin ; Chen, Renjie ; Liu, Ren ; Mook, William M. ; Jungjohann, Katherine L. ; Yu, Paul K. ; Dayeh, Shadi A. ( February 2019 , Journal of Applied Physics)