Biomimetic synaptic processes, which are imitated by functional memory devices in the computer industry, are a key focus of artificial intelligence (AI) research. It is critical to developing a memory technology that is compatible with Brain-Inspired Computing in order to eliminate the von Neumann bottleneck that restricts the efficiency of traditional computer designs. Due to restrictions such as high operation voltage, poor retention capacity, and high power consumption, silicon-based flash memory, which presently dominates the data storage devices market, is having difficulty meeting the requirements of future data storage device development. The developing resistive random-access memory (RRAM) has sparked intense investigation because of its simple two-terminal structure: two electrodes and a switching layer. RRAM has a resistive switching phenomenon which is a cycling behavior between the high resistance state and the low resistance state. This developing device type is projected to outperform traditional memory devices. Indium gallium zinc oxide (IGZO) has attracted great attention for the RRAM switching layer because of its high transparency and high atomic diffusion property of oxygen atoms. More importantly, by controlling the oxygen ratio in the sputter gas, its electrical properties can be easily tuned. The IGZO has been applied to the thin-film transistor (TFT), thus, it is very promising to integrate RRAM with TFT.
In this work, we proposed IGZO-based RRAMs. ITO was chosen as the bottom electrode towards achieving a fully transparent memristor. And for the IGZO switching layer, we varied the O2/Ar ratio during the deposition to modify the oxygen vacancy of IGZO. Through the XPS measurement, we confirmed that the higher O2/Ar ratio can lower the oxygen vacancy concentration. We also chose ITO as the top electrode, for the comparison, two active metals copper and silver were tested for the top electrode materials. For our IGZO layer, the best ratio of O2/Ar is the middle value. And copper top electrode device has the most stable cycling switching and the silver one is perfect for large memory window, however, it encounters a stability issue. The optical transmission examination was performed using a UV-Vis spectrometer, and the average transmittance
of the complete devices in the visible-light wavelength range was greater than 90%, indicating good transparency. 50nm, 100nm, and 150nm RS layers of IGZO RRAM were produced to explore the thickness dependency on the characteristics of the RS layer. Also, because the oxygen vacancy concentration influences the RS and RRAM performance, the oxygen partial pressure during IGZO sputtering was modified to maximize the property. Electrode selection is critical and can have a significant influence on the device's overall performance. As a result, Cu TE was chosen for our second type of device because Cu ion diffusion can aid in the development of conductive filaments (CF). Finally, between the TE and RS layers, a 5 nm SiO2 barrier layer was used to limit Cu penetration into the RS layer. Simultaneously, this SiO2 inserting layer can offer extra interfacial series resistance in the device, lowering the off current and, as a result, improving the on/off ratio and overall performance.
In conclusion, transparent IGZO-based RRAMs have been created. The thickness of the RS layer and the sputtering conditions of the RS layer were modified to tailor the property of the RS layer. A series of TE materials and a barrier layer were incorporated into an IGZO-based RRAM and the performance was evaluated in order to design the TE material's diffusion capabilities to the RS layer and the BE. Our positive findings show that IGZO is a potential material for RRAM applications and overcoming the existing memory
technology limitation.
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Artificial Intelligence Approaches for Energetic Materials by Design: State of the Art, Challenges, and Future Directions
Artificial intelligence (AI) is rapidly emerging as a enabling tool for solving complex materials design problems. This paper aims to review recent advances in AI‐driven materials‐by‐design and their applications to energetic materials (EM). Trained with data from numerical simulations and/or physical experiments, AI models can assimilate trends and patterns within the design parameter space, identify optimal material designs (micro‐morphologies, combinations of materials in composites, etc.), and point to designs with superior/targeted property and performance metrics. We review approaches focusing on such capabilities with respect to the three main stages of materials‐by‐design, namely representation learning of microstructure morphology (i. e., shape descriptors), structure‐property‐performance (S−P−P) linkage estimation, and optimization/design exploration. We leave out “process” as much work remains to be done to establish the connectivity between process and structure. We provide a perspective view of these methods in terms of their potential, practicality, and efficacy towards the realization of materials‐by‐design. Specifically, methods in the literature are evaluated in terms of their capacity to learn from a small/limited number of data, computational complexity, generalizability/scalability to other material species and operating conditions, interpretability of the model predictions, and the burden of supervision/data annotation. Finally, we suggest a few promising future research directions for EM materials‐by‐design, such as meta‐learning, active learning, Bayesian learning, and semi‐/weakly‐supervised learning, to bridge the gap between machine learning research and EM research.
more » « less- Award ID(s):
- 2203580
- NSF-PAR ID:
- 10402839
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Propellants, Explosives, Pyrotechnics
- Volume:
- 48
- Issue:
- 4
- ISSN:
- 0721-3115
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Thanks to the rapid advances in artificial intelligence, AI for science (AI4Science) has emerged as one of the new promising research directions for modern science and engineering. In this review, we focus on recent efforts to develop knowledge-driven Bayesian learning and experimental design methods for accelerating the discovery of novel functional materials as well as enhancing the understanding of composition-process-structure-property relationships. We specifically discuss the challenges and opportunities in integrating prior scientific knowledge and physics principles with AI and machine learning (ML) models for accelerating materials and knowledge discovery. The current state-of-the-art methods in knowledge-based prior construction, model fusion, uncertainty quantification, optimal experimental design, and symbolic regression are detailed in the review, along with several detailed case studies and results in materials discovery.more » « less
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By mimicking biomimetic synaptic processes, the success of artificial intelligence (AI) has been astounding with various applications such as driving automation, big data analysis, and natural-language processing.[1-4] Due to a large quantity of data transmission between the separated memory unit and the logic unit, the classical computing system with von Neumann architecture consumes excessive energy and has a significant processing delay.[5] Furthermore, the speed difference between the two units also causes extra delay, which is referred to as the memory wall.[6, 7] To keep pace with the rapid growth of AI applications, enhanced hardware systems that particularly feature an energy-efficient and high-speed hardware system need to be secured. The novel neuromorphic computing system, an in-memory architecture with low power consumption, has been suggested as an alternative to the conventional system. Memristors with analog-type resistive switching behavior are a promising candidate for implementing the neuromorphic computing system since the devices can modulate the conductance with cycles that act as synaptic weights to process input signals and store information.[8, 9]
The memristor has sparked tremendous interest due to its simple two-terminal structure, including top electrode (TE), bottom electrode (BE), and an intermediate resistive switching (RS) layer. Many oxide materials, including HfO2, Ta2O5, and IGZO, have extensively been studied as an RS layer of memristors. Silicon dioxide (SiO2) features 3D structural conformity with the conventional CMOS technology and high wafer-scale homogeneity, which has benefited modern microelectronic devices as dielectric and/or passivation layers. Therefore, the use of SiO2as a memristor RS layer for neuromorphic computing is expected to be compatible with current Si technology with minimal processing and material-related complexities.
In this work, we proposed SiO2-based memristor and investigated switching behaviors metallized with different reduction potentials by applying pure Cu and Ag, and their alloys with varied ratios. Heavily doped p-type silicon was chosen as BE in order to exclude any effects of the BE ions on the memristor performance. We previously reported that the selection of TE is crucial for achieving a high memory window and stable switching performance. According to the study which compares the roles of Cu (switching stabilizer) and Ag (large switching window performer) TEs for oxide memristors, we have selected the TE materials and their alloys to engineer the SiO2-based memristor characteristics. The Ag TE leads to a larger memory window of the SiO2memristor, but the device shows relatively large variation and less reliability. On the other hand, the Cu TE device presents uniform gradual switching behavior which is in line with our previous report that Cu can be served as a stabilizer, but with small on/off ratio.[9] These distinct performances with Cu and Ag metallization leads us to utilize a Cu/Ag alloy as the TE. Various compositions of Cu/Ag were examined for the optimization of the memristor TEs. With a Cu/Ag alloying TE with optimized ratio, our SiO2based memristor demonstrates uniform switching behavior and memory window for analog switching applications. Also, it shows ideal potentiation and depression synaptic behavior under the positive/negative spikes (pulse train).
In conclusion, the SiO2memristors with different metallization were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of memristor, we integrated Cu, Ag and Cu/Ag alloy as TEs and compared the switch characteristics. Our encouraging results clearly demonstrate that SiO2with Cu/Ag is a promising memristor device with synaptic switching behavior in neuromorphic computing applications.
Acknowledgement This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.
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et al. , Physica Status Solidi (RRL) - Rapid Research Letters, pssr.202200075R1, In press, 2022. -
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Abstract Materials discovery from the infinite earth repository is a major bottleneck for revolutionary technological progress. This labor‐intensive and time‐consuming process hinders the discovery of new materials. Although machine learning techniques show an excellent capability for speeding up materials discovery, obtaining effective material feature representations is still challenging, and making a precise prediction of the material properties is still tricky. This work focuses on developing an automatic material design and discovery framework enabled by data‐driven artificial intelligence (AI) models. Multiple types of material descriptors are first developed to promote the representation and encoding of the materials’ uniqueness, resulting in improved performance for different molecular properties predictions. The material's thermoelectric (TE) properties prediction is then utilized as a baseline to demonstrate the investigation logistic. The proposed framework achieves more than 90% accuracy for predicting materials' TE properties. Furthermore, the developed AI models identify 6 promising p‐type TE materials and 8 promising n‐type TE materials. The prediction results are evaluated by density functional theory calculations and agree with the material's TE property provided by experimental results. The proposed framework is expected to accelerate the design and discovery of the new functional materials.
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Abstract Topology optimization has been proved to be an automatic, efficient and powerful tool for structural designs. In recent years, the focus of structural topology optimization has evolved from mono-scale, single material structural designs to hierarchical multimaterial structural designs. In this research, the multi-material structural design is carried out in a concurrent parametric level set framework so that the structural topologies in the macroscale and the corresponding material properties in mesoscale can be optimized simultaneously. The constructed cardinal basis function (CBF) is utilized to parameterize the level set function. With CBF, the upper and lower bounds of the design variables can be identified explicitly, compared with the trial and error approach when the radial basis function (RBF) is used. In the macroscale, the ‘color’ level set is employed to model the multiple material phases, where different materials are represented using combined level set functions like mixing colors from primary colors. At the end of this optimization, the optimal material properties for different constructing materials will be identified. By using those optimal values as targets, a second structural topology optimization is carried out to determine the exact mesoscale metamaterial structural layout. In both the macroscale and the mesoscale structural topology optimization, an energy functional is utilized to regularize the level set function to be a distance-regularized level set function, where the level set function is maintained as a signed distance function along the design boundary and kept flat elsewhere. The signed distance slopes can ensure a steady and accurate material property interpolation from the level set model to the physical model. The flat surfaces can make it easier for the level set function to penetrate its zero level to create new holes. After obtaining both the macroscale structural layouts and the mesoscale metamaterial layouts, the hierarchical multimaterial structure is finalized via a local-shape-preserving conformal mapping to preserve the designed material properties. Unlike the conventional conformal mapping using the Ricci flow method where only four control points are utilized, in this research, a multi-control-point conformal mapping is utilized to be more flexible and adaptive in handling complex geometries. The conformally mapped multi-material hierarchical structure models can be directly used for additive manufacturing, concluding the entire process of designing, mapping, and manufacturing.
