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Title: Birefringent coating to remove polarization dependent phase shift
Polarization aberrations are found in most optical components due to a materials differing response to s- and p-polarizations. This differing response can manifest either as diattenuation, retardance, or both. Correction of polarization aberrations, such as these, are critical in many applications such as interferometry, polarimetry, display, and high contrast imaging, including astronomy. In this work, compensators based on liquid crystal polymer and anti-reflection thin-films are presented to correct polarization aberrations in both transmission and reflection configurations. Our method is versatile, allowing for good correction in transmission and reflection due to optical components possessing differing diattenuation and retardance dispersions. Through simulation and experimental validation we show two designs, one correcting the polarization aberrations of a dichroic spectral filter over a 170nm wavelength band, and the other correcting the polarization aberration of an aluminum-coated mirror over a 400nm wavelength band and a 55-degree cone of angles. The measured performance of the polarization aberration compensators shows good agreement with theory.
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Optics express
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National Science Foundation
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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. 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