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Title: Effect of electron- and hole-doping on properties of kagomé-lattice ferromagnet Fe 3 Sn 2
Abstract

We report a theoretical investigation of effects of Mn and Co substitution in the transition metal sites of the kagomé-lattice ferromagnet, Fe3Sn2. Herein, hole- and electron-doping effects of Fe3Sn2have been studied by density-functional theory calculations on the parent phase and on the substituted structural models of Fe3−xMxSn2(M = Mn, Co;x= 0.5, 1.0). All optimized structures favor the ferromagnetic ground state. Analysis of the electronic density of states (DOS) and band structure plots reveals that the hole (electron) doping leads to a progressive decrease (increase) in the magnetic moment per Fe atom and per unit cell overall. The high DOS is retained nearby the Fermi level in the case of both Mn and Co substitutions. The electron doping with Co results in the loss of nodal band degeneracies, while in the case of hole doping with Mn emergent nodal band degeneracies and flatbands initially are suppressed in Fe2.5Mn0.5Sn2but re-emerge in Fe2MnSn2. These results provide key insights into potential modifications of intriguing coupling between electronic and spin degrees of freedom observed in Fe3Sn2.

 
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Award ID(s):
1905499
NSF-PAR ID:
10406181
Author(s) / Creator(s):
; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Journal of Physics: Condensed Matter
Volume:
35
Issue:
26
ISSN:
0953-8984
Page Range / eLocation ID:
Article No. 265801
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    Acknowledgement

    This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 20011028) by KRISS. K.N. was supported by Basic Science Research Program (NRF-2021R11A1A01051246) through the NRF Korea funded by the Ministry of Education.

    References

    Lee, D. H.; Park, H.; Clevenger, M.; Kim, H.; Kim, C. S.; Liu, M.; Kim, G.; Song, H. W.; No, K.; Kim, S. Y.; Ko, D.-K.; Lucietto, A.; Park, H.; Lee, S., High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnOx and n-InGaZnO.ACS Applied Materials & Interfaces2021,13(46), 55676-55686.

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    Yim, K.; Youn, Y.; Lee, M.; Yoo, D.; Lee, J.; Cho, S. H.; Han, S., Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor.npj Computational Materials2018,4(1), 17.

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