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1. Time‐Resolved Second‐Order Coherence Characterization of Broadband Metallic Nanolasers

   https://doi.org/10.1002/lpor.202000593  

   George, Agnes ; Bruhacs, Andrew ; Aadhi, A. ; Hayenga, William E. ; Ostic, Rachel ; Whitby, Erin ; Kues, Michael ; Wang, Zhiming M. ; Reimer, Christian ; Khajavikhan, Mercedeh ; et al ( October 2021 , Laser & Photonics Reviews)

   High‐bandwidth metallic coaxial nanolasers are of high interest to investigate laser physics such as thresholdless coherence transitions, and have a large variety of promising applications enabled by their ultrasmall size and large spectral bandwidth. Optical coherence properties are commonly characterized in Hanbury‐Brown and Twiss experiments. However, those are difficult to perform in broadband lasers when the coherence time is an order of magnitude shorter than the temporal resolution of the single‐photon detectors, thus requiring significant spectral filtering. This paper demonstrates a new approach in investigating the temporal dynamics of the photon statistics associated with the nanolaser emission, obtained without the requirement of spectral filtering. While optically pumping the nanolasers with nanosecond pulses, time‐resolved second‐order coherence properties are evaluated over the time duration of the pump pulse. Coherence transitions from thermal emission to lasing are observed in the gathered time‐resolved photon statistics, linked to the temporal change in optical power of the nanosecond pump pulses. As nanolasers show better performance for the pulsed pumping scheme, the temporal envelope modulation of these pulses results in varying degrees of coherence within the nanolaser pulse envelope. This approach can also be readily applied to characterize a large variety of broadband lasers.

    

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2. Effect of environmental screening and strain on optoelectronic properties of two-dimensional quantum defects

   https://doi.org/10.1088/2053-1583/acddf6  

   Zhang, Shimin ; Li, Kejun ; Guo, Chunhao ; Ping, Yuan ( June 2023 , 2D Materials)

   Abstract Point defects in hexagonal boron nitride (hBN) are promising candidates as single-photon emitters (SPEs) in nanophotonics and quantum information applications. The precise control of SPEs requires in-depth understanding of their optoelectronic properties. However, how the surrounding environment of host materials, including the number of layers, substrates, and strain, influences SPEs has not been fully understood. In this work, we study the dielectric screening effect due to the number of layers and substrates, and the strain effect on the optical properties of carbon dimer and nitrogen vacancy defects in hBN from first-principles many-body perturbation theory. We report that environmental screening causes a lowering of the quasiparticle gap and exciton binding energy, leading to nearly constant optical excitation energy and exciton radiative lifetime. We explain the results with an analytical model starting from the Bethe–Salpeter equation Hamiltonian with Wannier basis. We also show that optical properties of quantum defects are largely tunable by strain with highly anisotropic response, in good agreement with experimental measurements. Our work clarifies the effect of environmental screening and strain on optoelectronic properties of quantum defects in two-dimensional insulators, facilitating future applications of SPEs and spin qubits in low-dimensional systems. 

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3. Narrow-Linewidth Tin-Vacancy Centers in a Diamond Waveguide

   https://doi.org/10.1021/acsphotonics.0c00833  

   Rugar, Alison E. ; Dory, Constantin ; Aghaeimeibodi, Shahriar ; Lu, Haiyu ; Sun, Shuo ; Mishra, Sattwik Deb ; Shen, Zhi-Xun ; Melosh, Nicholas A. ; Vučković, Jelena ( September 2020 , ACS Photonics)

   Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV−) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties, including narrow-linewidth emission and long spin coherence times. SnV− centers need to be incorporated in optical waveguides for efficient onchip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV− centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for the generation of high-quality SnV− centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV− centers (as narrow as 36 ± 2 MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV− centers under resonant excitation. Our results are an important step toward SnV−-based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions. 

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4. Phase-factor spectra of turbulent phase screens

   https://doi.org/10.1364/JOSAA.429928  

   Muschinski, Andreas ( August 2021 , Journal of the Optical Society of America A)

   The optical phase$\mathrm{\varphi <\#comment/>}$is a key quantity in the physics of light propagating through a turbulent medium. In certain respects, however, the statistics of the phasefactor,$\mathrm{\psi <\#comment/>}=\exp <\#comment/>(i\mathrm{\varphi <\#comment/>})$, are more relevant than the statistics of the phase itself. Here, we present a theoretical analysis of the 2D phase-factor spectrum$F_{\mathrm{\psi <\#comment/>}}(\mathit{\kappa <\#comment/>})$of a random phase screen. We apply the theory to four types of phase screens, each characterized by a power-law phase structure function,$D_{\mathrm{\varphi <\#comment/>}}(r)=(r/r_c{)}^{\mathrm{\gamma <\#comment/>}}$(where$r_c$is the phase coherence length defined by$D_{\mathrm{\varphi <\#comment/>}}(r_c)=1{\mathrm{r}\mathrm{a}\mathrm{d}}^2$), and a probability density function$p_{\mathrm{\alpha <\#comment/>}}(\mathrm{\alpha <\#comment/>})$of the phase increments for a given spatial lag. We analyze phase screens with turbulent ($\mathrm{\gamma <\#comment/>}=5/3$) and quadratic ($\mathrm{\gamma <\#comment/>}=2$) phase structure functions and with normally distributed (i.e., Gaussian) versus Laplacian phase increments. We find that there is a pronounced bump in each of the four phase-factor spectra$F_{\mathrm{\psi <\#comment/>}}(\mathrm{\kappa <\#comment/>})$. The precise location and shape of the bump are different for the four phase-screen types, but in each case it occurs at$\mathrm{\kappa <\#comment/>}\sim <\#comment/>1/r_c$. The bump is unrelated to the well-known “Hill bump” and is not caused by diffraction effects. It is solely a characteristic of the refractive-index statistics represented by the respective phase screen. We show that the second-order$\mathrm{\psi <\#comment/>}$statistics (covariance function, structure function, and spectrum) characterize a random phase screen more completely than the second-order$\mathrm{\varphi <\#comment/>}$counterparts.

    

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5. Electrical and optical control of single spins integrated in scalable semiconductor devices

   https://doi.org/10.1126/science.aax9406  

   Anderson, Christopher P. ; Bourassa, Alexandre ; Miao, Kevin C. ; Wolfowicz, Gary ; Mintun, Peter J. ; Crook, Alexander L. ; Abe, Hiroshi ; Ul Hassan, Jawad ; Son, Nguyen T. ; Ohshima, Takeshi ; et al ( December 2019 , Science)

   Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.

    

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