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Title: N-polar GaN p-n junction diodes with low ideality factors
Abstract High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current–voltage characteristics reveal a high on/off current ratio of >10 11 at ±4 V and an ideality factor of 1.6. As the temperature increases to 200 °C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley–Read–Hall recombination times of 0.32–0.46 ns are estimated. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level and acceptor-related luminescence is greatly suppressed.  more » « less
Award ID(s):
1719875
PAR ID:
10411633
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Applied Physics Express
Volume:
15
Issue:
6
ISSN:
1882-0778
Page Range / eLocation ID:
064004
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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