More Like this

1. Perpendicular magnetic tunnel junctions with multi-interface free layer

   https://doi.org/10.1063/5.0066782  

   Khanal, Pravin; Zhou, Bowei; Andrade, Magda; Dang, Yanliu; Davydov, Albert; Habiboglu, Ali; Saidian, Jonah; Laurie, Adam; Wang, Jian-Ping; Gopman, Daniel B; et al (December 2021, Applied Physics Letters)
2. Double-free-layer stochastic magnetic tunnel junctions with synthetic antiferromagnets

   https://doi.org/10.1103/PhysRevApplied.21.054002  

   Selcuk, Kemal; Kanai, Shun; Ota, Rikuto; Ohno, Hideo; Fukami, Shunsuke; Camsari, Kerem_Y (May 2024, Physical Review Applied)
3. High Tunnelling Magnetoresistance in Magnetic Tunnel Junctions with Sub-nm thick Al2O3 Tunnel Barriers Fabricated Using Atomic Layer Deposition

   https://doi.org/10.1021/acsami.0c03428  

   Acharya, Jagaran; Goul, Ryan; Wu, Judy Z. (July 2020, ACS Applied Materials & Interfaces)

   Pinhole-free and defect-free ultrathin dielectric tunnel barriers (TBs) is a key to obtaining high tunnelling magnetoresistance (TMR) and efficient switching in magnetic tunnel junctions (MTJs). Among others, atomic layer deposition (ALD) provides a unique approach for the fabrication of ultrathin TBs with several advantages including an atomic-scale control on the TB thickness, conformal coating, and low defects density. Motivated by this, this work explores fabrication and characterization of spin-valve Fe/ALD-Al2O3/Fe MTJs with ALD-Al2O3 TB thickness of 0.55 nm using in situ ALD. Remarkably, high TMR values of ~77% and ~ 90% have been obtained respectively at room temperature and at 100 K, which are comparable to the best reported values on MTJs having thermal AlOx TBs with optimized device structures. In situ scanning tunnelling spectroscopy characterization of the ALD-Al2O3 TBs has revealed a higher tunnel barrier height (Eb) of 1.33±0.06 eV, in contrast to Eb~0.3-0.6 eV for their AlOx TB counterparts, indicative of significantly lower defect concentration in the former. This first success of the MTJs with sub-nm thick ALD-Al2O3 TBs demonstrates the feasibility of in situ ALD for fabrication of pinhole-free and low-defect ultrathin TBs for practical applications and the performance could be further improved through device optimization. 

   more » « less
4. Equivalent Turbulence Profiles from Randomized Terrain in a Boundary Layer Wind Tunnel

   Mariel Ojeda-Tuz, Mohit Chauhan (January 2022, 14th Americas Conference on Wind Engineering)
5. Equivalent Turbulence Profiles from Randomized Terrain in a Boundary Layer Wind Tunnel

   Mariel Ojeda-Tuz, Mohit Chauhan (January 2022, Conference of the Engineering Mechanics Institute)