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Title: Generalized Architecture of a GaN-Based Modular Multiport Multilevel Flying Capacitor Converter
This paper proposes a generalized Gallium Nitride (GaN) based modular multiport multilevel flying capacitor architecture. In other words, the attractive flying capacitor multilevel (FCML) design and the full-bridge unfolding circuit are employed to develop a multiport multilevel converter architecture that fits various applications. Each module can be designed to contain any combination of AC and DC ports connected through DC-to-DC and DC-to-AC power conversion paths. These conversion paths are FCML topologies that can be designed with any number of levels; the DC-to-AC paths incorporate the full-bridge unfolding circuit. Two example prototypes with open-loop control, three-port and four-port, have verified this generalized architecture. A single module 3 kW three-port four-level prototype with two DC ports and an AC port has achieved a compact size of 11.6 in 3 (4.8 in ×4.3 in × 0.56 in) and a high power density of 258.6 W/in 3 . The three ports are connected through DC-to-AC and DC-to-DC paths that have achieved peak efficiencies of 98.2% and 99.43%, respectively. The total harmonic distortion (THD) of the AC port's voltage and current are 1.26% and 1.23%, respectively. It operates at a high switching frequency of 120 kHz because of the GaN switches and has an actual frequency (inductor's ripple frequency) of 360 kHz thanks to the frequency multiplication effect of the FCML. The four-port prototype contains three DC ports and an AC port and achieved similar high figures of merit. These experimental results of the two prototypes of high efficiency, power density, and compact size are presented in this article and highlight this architecture's promising potential. The choice of the number of modules, ports, and levels depends on the application and its specification; therefore, this proposed generalized structure may serve as a reference design approach for various applications of interest.  more » « less
Award ID(s):
2103442
NSF-PAR ID:
10412579
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
IEEE Transactions on Power Electronics
ISSN:
0885-8993
Page Range / eLocation ID:
1 to 21
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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